Datasheets
FF600R12ME4EB11BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-13

Part Details for FF600R12ME4EB11BOSA1 by Infineon Technologies AG

Results Overview of FF600R12ME4EB11BOSA1 by Infineon Technologies AG

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FF600R12ME4EB11BOSA1 Information

FF600R12ME4EB11BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FF600R12ME4EB11BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FF600R12ME4EB11BOSA1-ND
DigiKey IGBT MOD 1200V 995A 4050W Min Qty: 1 Lead time: 52 Weeks Container: Bulk MARKETPLACE PRODUCT 1336
In Stock
  • 2 $208.0700
$208.0700 Buy Now
DISTI # FF600R12ME4EB11BOSA1-ND
DigiKey IGBT MOD 1200V 995A 4050W Min Qty: 1 Lead time: 52 Weeks Container: Tray 5
In Stock
  • 1 $442.9100
$442.9100 Buy Now
DISTI # FF600R12ME4EB11BOS
Avnet Americas Transistor IGBT Module N-CH 1.2kV 600A ?20V Screw Tray - Trays (Alt: FF600R12ME4EB11BOS) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 111 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 85982795
Verical Trans IGBT Module N-CH 1200V 600A 13-Pin Tray Min Qty: 2 Package Multiple: 1 Date Code: 2001 Americas - 958
  • 2 $250.0875
$250.0875 Buy Now
DISTI # 85982735
Verical Trans IGBT Module N-CH 1200V 600A 13-Pin Tray Min Qty: 2 Package Multiple: 1 Date Code: 2101 Americas - 372
  • 2 $250.0875
$250.0875 Buy Now
DISTI # 85982406
Verical Trans IGBT Module N-CH 1200V 600A 13-Pin Tray Min Qty: 2 Package Multiple: 1 Date Code: 1801 Americas - 7
  • 2 $250.0875
$250.0875 Buy Now
Rochester Electronics FF600R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 1337
  • 1 $200.0700
  • 25 $194.0700
  • 100 $188.0700
  • 500 $182.0600
  • 1,000 $176.0600
$176.0600 / $200.0700 Buy Now
Cytech Systems Limited IGBT MOD 1200V 995A 4050W 150
RFQ
DISTI # SP001671626
EBV Elektronik Transistor IGBT Module NCH 12kV 600A 20V Screw Tray (Alt: SP001671626) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 909
RFQ

Part Details for FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1 CAD Models

FF600R12ME4EB11BOSA1 Part Data Attributes

FF600R12ME4EB11BOSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FF600R12ME4EB11BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-13
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-13
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.35 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X13
Number of Elements 2
Number of Terminals 13
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 700 ns
Turn-on Time-Nom (ton) 340 ns
VCEsat-Max 2.1 V

FF600R12ME4EB11BOSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the FF600R12ME4EB11BOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.

  • To ensure proper thermal management, it's essential to provide adequate heat sinking, ensure good thermal contact between the module and heat sink, and maintain a clean and dust-free environment. Additionally, consider using thermal interface materials and thermal pads to improve heat transfer.

  • The recommended gate resistor value for the FF600R12ME4EB11BOSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.

  • Yes, the FF600R12ME4EB11BOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.

  • The maximum allowable voltage transient for the FF600R12ME4EB11BOSA1 is specified as 1200 V for a duration of 1 microsecond. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.

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