-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FF600R12ME4EB11BOSA1 by Infineon Technologies AG
Results Overview of FF600R12ME4EB11BOSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FF600R12ME4EB11BOSA1 Information
FF600R12ME4EB11BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FF600R12ME4EB11BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-FF600R12ME4EB11BOSA1-ND
|
DigiKey | IGBT MOD 1200V 995A 4050W Min Qty: 1 Lead time: 52 Weeks Container: Bulk MARKETPLACE PRODUCT |
1336 In Stock |
|
$208.0700 | Buy Now |
|
DISTI #
FF600R12ME4EB11BOSA1-ND
|
DigiKey | IGBT MOD 1200V 995A 4050W Min Qty: 1 Lead time: 52 Weeks Container: Tray |
5 In Stock |
|
$442.9100 | Buy Now |
|
DISTI #
FF600R12ME4EB11BOS
|
Avnet Americas | Transistor IGBT Module N-CH 1.2kV 600A ?20V Screw Tray - Trays (Alt: FF600R12ME4EB11BOS) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 111 Weeks, 0 Days Container: Tray | 0 |
|
RFQ | |
|
DISTI #
85982795
|
Verical | Trans IGBT Module N-CH 1200V 600A 13-Pin Tray Min Qty: 2 Package Multiple: 1 Date Code: 2001 | Americas - 958 |
|
$250.0875 | Buy Now |
|
DISTI #
85982735
|
Verical | Trans IGBT Module N-CH 1200V 600A 13-Pin Tray Min Qty: 2 Package Multiple: 1 Date Code: 2101 | Americas - 372 |
|
$250.0875 | Buy Now |
|
DISTI #
85982406
|
Verical | Trans IGBT Module N-CH 1200V 600A 13-Pin Tray Min Qty: 2 Package Multiple: 1 Date Code: 1801 | Americas - 7 |
|
$250.0875 | Buy Now |
|
|
Rochester Electronics | FF600R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 1337 |
|
$176.0600 / $200.0700 | Buy Now |
|
|
Cytech Systems Limited | IGBT MOD 1200V 995A 4050W | 150 |
|
RFQ | |
|
DISTI #
SP001671626
|
EBV Elektronik | Transistor IGBT Module NCH 12kV 600A 20V Screw Tray (Alt: SP001671626) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 909 |
|
RFQ |
Part Details for FF600R12ME4EB11BOSA1
FF600R12ME4EB11BOSA1 CAD Models
FF600R12ME4EB11BOSA1 Part Data Attributes
|
|
FF600R12ME4EB11BOSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FF600R12ME4EB11BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-13
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-13 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.35 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X13 | |
| Number of Elements | 2 | |
| Number of Terminals | 13 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 700 ns | |
| Turn-on Time-Nom (ton) | 340 ns | |
| VCEsat-Max | 2.1 V |
FF600R12ME4EB11BOSA1 Frequently Asked Questions (FAQ)
-
The maximum operating temperature of the FF600R12ME4EB11BOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
-
To ensure proper thermal management, it's essential to provide adequate heat sinking, ensure good thermal contact between the module and heat sink, and maintain a clean and dust-free environment. Additionally, consider using thermal interface materials and thermal pads to improve heat transfer.
-
The recommended gate resistor value for the FF600R12ME4EB11BOSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
-
Yes, the FF600R12ME4EB11BOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.
-
The maximum allowable voltage transient for the FF600R12ME4EB11BOSA1 is specified as 1200 V for a duration of 1 microsecond. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.