Part Details for FF300R12KE4B2HOSA1 by Infineon Technologies AG
Results Overview of FF300R12KE4B2HOSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
FF300R12KE4B2HOSA1 Information
FF300R12KE4B2HOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FF300R12KE4B2HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FF300R12KE4B2HOSA1-ND
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DigiKey | IGBT MOD 1200V 460A 1600W Min Qty: 10 Lead time: 14 Weeks Container: Tray | Temporarily Out of Stock |
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$91.3500 | Buy Now |
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DISTI #
FF300R12KE4B2HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 460A 20V Screw Mount Tray - Trays (Alt: FF300R12KE4B2HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 14 Weeks, 0 Days Container: Tray | 0 |
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$101.5812 | Buy Now |
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DISTI #
SP000623168
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EBV Elektronik | Transistor IGBT Module NCH 1200V 460A 20V Screw Mount Tray (Alt: SP000623168) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2 |
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RFQ |
Part Details for FF300R12KE4B2HOSA1
FF300R12KE4B2HOSA1 CAD Models
FF300R12KE4B2HOSA1 Part Data Attributes
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FF300R12KE4B2HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF300R12KE4B2HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 460 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 800 ns | |
| Turn-on Time-Nom (ton) | 325 ns |
Alternate Parts for FF300R12KE4B2HOSA1
This table gives cross-reference parts and alternative options found for FF300R12KE4B2HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF300R12KE4B2HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APTGT400A120G | Microchip Technology Inc | $302.8168 | Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel | FF300R12KE4B2HOSA1 vs APTGT400A120G |
| FF300R12KE4 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | FF300R12KE4B2HOSA1 vs FF300R12KE4 |
| FZ400R12KP4 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | FF300R12KE4B2HOSA1 vs FZ400R12KP4 |
| APTGT400A120 | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | FF300R12KE4B2HOSA1 vs APTGT400A120 |
FF300R12KE4B2HOSA1 Frequently Asked Questions (FAQ)
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The recommended gate resistor value is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the application note or contact Infineon support for more detailed guidance.
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Proper thermal management involves ensuring good heat transfer between the module and the heat sink, using a suitable thermal interface material, and maintaining a low thermal resistance. It's also important to follow the recommended mounting and cooling guidelines provided in the datasheet and application notes.
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The maximum allowed overcurrent and overvoltage for the FF300R12KE4B2HOSA1 are not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the application notes and to consult with Infineon support to determine the specific limits for your application.
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Yes, the FF300R12KE4B2HOSA1 can be used in a parallel configuration, but it's essential to follow the guidelines provided in the application notes and to ensure that the modules are properly matched and synchronized to avoid uneven current sharing and thermal issues.
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The recommended dead time for the FF300R12KE4B2HOSA1 is typically around 1-2 microseconds, depending on the specific application and switching frequency. However, it's recommended to consult the application notes and to experiment with different dead times to find the optimal value for your specific use case.