Datasheets
FF300R12KE4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for FF300R12KE4 by Infineon Technologies AG

Results Overview of FF300R12KE4 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

FF300R12KE4 Information

FF300R12KE4 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FF300R12KE4

Part # Distributor Description Stock Price Buy
DISTI # 641-FF300R12KE4
Mouser Electronics IGBT Modules N-CH 1.2KV 460A RoHS: Compliant 184
  • 1 $108.0900
  • 10 $93.9600
$93.9600 / $108.0900 Buy Now

Part Details for FF300R12KE4

FF300R12KE4 Part Data Attributes

FF300R12KE4 Infineon Technologies AG
Buy Now Datasheet
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FF300R12KE4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 460 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1600 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 325 ns
VCEsat-Max 2.15 V

Alternate Parts for FF300R12KE4

This table gives cross-reference parts and alternative options found for FF300R12KE4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF300R12KE4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FF300R12KE4HOSA1 Infineon Technologies AG $75.6186 Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 FF300R12KE4 vs FF300R12KE4HOSA1
Part Number Manufacturer Composite Price Description Compare
FF300R12KE4_B2 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 FF300R12KE4 vs FF300R12KE4_B2

FF300R12KE4 Related Parts

FF300R12KE4 Frequently Asked Questions (FAQ)

  • The maximum allowed junction temperature for the FF300R12KE4 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.

  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's surface, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.

  • The recommended gate resistor value for the FF300R12KE4 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 22 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.

  • Yes, the FF300R12KE4 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the application note or contact Infineon's technical support for guidance on parallel configuration.

  • The recommended dead time for the FF300R12KE4 depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.

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