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Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FF300R12KE4 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FF300R12KE4
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Mouser Electronics | IGBT Modules N-CH 1.2KV 460A RoHS: Compliant | 184 |
|
$93.9600 / $108.0900 | Buy Now |
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FF300R12KE4
Infineon Technologies AG
Buy Now
Datasheet
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FF300R12KE4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 460 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1600 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 800 ns | |
Turn-on Time-Nom (ton) | 325 ns | |
VCEsat-Max | 2.15 V |
This table gives cross-reference parts and alternative options found for FF300R12KE4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF300R12KE4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FF300R12KE4HOSA1 | Infineon Technologies AG | $75.6186 | Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | FF300R12KE4 vs FF300R12KE4HOSA1 |
The maximum allowed junction temperature for the FF300R12KE4 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's surface, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
The recommended gate resistor value for the FF300R12KE4 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 22 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
Yes, the FF300R12KE4 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the application note or contact Infineon's technical support for guidance on parallel configuration.
The recommended dead time for the FF300R12KE4 depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.