Part Details for FF2MR12KM1HOSA1 by Infineon Technologies AG
Results Overview of FF2MR12KM1HOSA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
FF2MR12KM1HOSA1 Information
FF2MR12KM1HOSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FF2MR12KM1HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AH9453
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Newark | Mosfet, Sic, N-Ch, 1.2Kv, 500A, Module, Mosfet Module Configuration:Half Bridge, Channel Type:Dual N Channel, Continuous Drain Current Id:500A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:-, Rds(On) Test Voltage:15V Rohs Compliant: Yes |Infineon FF2MR12KM1HOSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
448-FF2MR12KM1HOSA1-ND
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DigiKey | MOSFET 2N-CH 1200V 500A AG-62MM Min Qty: 1 Lead time: 99 Weeks Container: Tray |
13 In Stock |
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$872.1100 | Buy Now |
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DISTI #
V99:2348_24705417
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 500A Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2246 | Americas - 10 |
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$845.9600 | Buy Now |
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DISTI #
85986814
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Verical | Trans MOSFET N-CH SiC 1.2KV 500A Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2201 | Americas - 280 |
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$915.7375 / $1,040.6125 | Buy Now |
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DISTI #
85980736
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Verical | Trans MOSFET N-CH SiC 1.2KV 500A Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2301 | Americas - 90 |
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$915.7375 / $1,040.6125 | Buy Now |
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DISTI #
85982332
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Verical | Trans MOSFET N-CH SiC 1.2KV 500A Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2101 | Americas - 9 |
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$915.7375 / $1,040.6125 | Buy Now |
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DISTI #
85982024
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Verical | Trans MOSFET N-CH SiC 1.2KV 500A Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2001 | Americas - 1 |
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$915.7375 / $1,040.6125 | Buy Now |
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Rochester Electronics | FFXMR12KM1H - MOSFET 2 N-Channel Array 1.2kV 500A (Tc) Module RoHS: Compliant Status: Obsolete Min Qty: 1 | 380 |
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$732.5900 / $832.4900 | Buy Now |
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DISTI #
SP002851510
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EBV Elektronik | Transistor Silicon Carbide MOSFET Array Module Dual NCH 1200V AG62MM Tray (Alt: SP002851510) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FF2MR12KM1HOSA1
FF2MR12KM1HOSA1 CAD Models
FF2MR12KM1HOSA1 Part Data Attributes
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FF2MR12KM1HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF2MR12KM1HOSA1
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| FET Technology | TRENCH MOSFET | |
| Feedback Cap-Max (Crss) | 302 pF | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1000 A | |
| Reference Standard | IEC-61140 | |
| Surface Mount | YES | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
FF2MR12KM1HOSA1 Frequently Asked Questions (FAQ)
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Infineon recommends a PCB layout with a large copper area for heat dissipation, and a thermal via array under the device to improve heat transfer to the PCB.
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Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a thermocouple or thermistor to monitor the device temperature.
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Infineon recommends a soldering temperature of 260°C (max) for 10 seconds (max) using a solder with a melting point above 217°C. Follow the IPC-J-STD-020 standard for reflow soldering.
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Handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper grounding procedures. The device has built-in ESD protection, but external protection measures are still recommended.
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Store the device in its original packaging, away from direct sunlight, moisture, and extreme temperatures. Handle the device by the body, not the leads, and avoid bending or flexing the leads.