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Part Details for FF200R12KE3 by Infineon Technologies AG
Results Overview of FF200R12KE3 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FF200R12KE3 Information
FF200R12KE3 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FF200R12KE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FF200R12KE3
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Mouser Electronics | IGBT Modules 1200V 200A DUAL RoHS: Compliant | 36 |
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$100.5500 / $117.8600 | Buy Now |
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DISTI #
FF200R12KE3
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 | 0 |
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$175.4300 / $252.3700 | RFQ |
Part Details for FF200R12KE3
FF200R12KE3 CAD Models
FF200R12KE3 Part Data Attributes
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FF200R12KE3
Infineon Technologies AG
Buy Now
Datasheet
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FF200R12KE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 295 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1040 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 830 ns | |
| Turn-on Time-Nom (ton) | 400 ns | |
| VCEsat-Max | 2.15 V |
FF200R12KE3 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the FF200R12KE3 is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a temperature below 125°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate resistor value for the FF200R12KE3 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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Yes, the FF200R12KE3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing. Consult the datasheet and application notes for more information on parallel operation.
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The maximum allowable voltage transient for the FF200R12KE3 is 1200 V, as specified in the datasheet. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.