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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FF150R12RT4 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Cytech Systems Limited | 30 |
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RFQ | ||
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MacroQuest Electronics | 1000 |
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RFQ | ||
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Win Source Electronics | 34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode | 500 |
|
$67.7820 / $83.4240 | Buy Now |
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FF150R12RT4
Infineon Technologies AG
Buy Now
Datasheet
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FF150R12RT4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 2 | |
Number of Terminals | 5 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 490 ns | |
Turn-on Time-Nom (ton) | 185 ns |
The maximum allowed junction temperature for the FF150R12RT4 is 150°C, as specified in the datasheet.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a suitable heat sink, ensuring good airflow, and avoiding overheating.
The recommended gate resistor value for the FF150R12RT4 is typically in the range of 10-20 ohms, depending on the specific application and switching frequency.
Yes, the FF150R12RT4 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between the devices.
To protect the FF150R12RT4, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, as well as a suitable fuse or circuit breaker.