Datasheets
FF1400R12IP4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel, MODULE-13

Part Details for FF1400R12IP4 by Infineon Technologies AG

Results Overview of FF1400R12IP4 by Infineon Technologies AG

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FF1400R12IP4 Information

FF1400R12IP4 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FF1400R12IP4

Part # Distributor Description Stock Price Buy
DISTI # 641-FF1400R12IP4
Mouser Electronics IGBT Modules 1200 V, 1400 A dual IGBT module RoHS: Compliant 0
  • 1 $634.5600
  • 10 $634.5500
$634.5500 / $634.5600 Order Now
MacroQuest Electronics   46
RFQ
Win Source Electronics PrimePACK™3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC 1052
  • 1 $396.2292
$396.2292 Buy Now

Part Details for FF1400R12IP4

FF1400R12IP4 Part Data Attributes

FF1400R12IP4 Infineon Technologies AG
Buy Now Datasheet
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FF1400R12IP4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel, MODULE-13
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-13
Pin Count 13
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 1400 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 7600 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1200 ns
Turn-on Time-Nom (ton) 340 ns
VCEsat-Max 2.05 V

FF1400R12IP4 Related Parts

FF1400R12IP4 Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the FF1400R12IP4 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device. Additionally, operating the device within its specified ratings and avoiding overheating can help prevent premature failure.

  • The recommended gate drive voltage for the FF1400R12IP4 is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and current requirements.

  • Yes, the FF1400R12IP4 can be used in a parallel configuration to increase power handling. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.

  • The maximum allowable voltage transient for the FF1400R12IP4 is specified in the datasheet as 1200V. However, it's essential to consult the datasheet and application notes for specific guidance on voltage transient protection and overvoltage protection circuits.

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