Part Details for FF100R12KS4HOSA1 by Infineon Technologies AG
Results Overview of FF100R12KS4HOSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FF100R12KS4HOSA1 Information
FF100R12KS4HOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FF100R12KS4HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FF100R12KS4HOSA1-ND
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DigiKey | IGBT MOD 1200V 150A 780W Min Qty: 1 Lead time: 22 Weeks Container: Tray | Temporarily Out of Stock |
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$85.3620 / $102.7200 | Buy Now |
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DISTI #
FF100R12KS4HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 150A 20V Screw Mount Tray - Trays (Alt: FF100R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 22 Weeks, 0 Days Container: Tray | 0 |
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$94.9231 | Buy Now |
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Rochester Electronics | MEDIUM POWER 62MM RoHS: Compliant Status: Active Min Qty: 1 | 1 |
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$71.7000 / $89.6300 | Buy Now |
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DISTI #
SP000100705
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EBV Elektronik | Transistor IGBT Module NCH 1200V 150A 20V Screw Mount Tray (Alt: SP000100705) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FF100R12KS4HOSA1
FF100R12KS4HOSA1 CAD Models
FF100R12KS4HOSA1 Part Data Attributes
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FF100R12KS4HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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FF100R12KS4HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 590 ns | |
| Turn-on Time-Nom (ton) | 180 ns |
FF100R12KS4HOSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the FF100R12KS4HOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate resistor value for the FF100R12KS4HOSA1 is between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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Yes, the FF100R12KS4HOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the datasheet and application notes for more information on parallel operation.
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The recommended dead time for the FF100R12KS4HOSA1 is typically around 1-2 microseconds. However, the optimal dead time may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.