Part Details for FDS8949_F085 by onsemi
Results Overview of FDS8949_F085 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDS8949_F085 Information
FDS8949_F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDS8949_F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84W8876
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Newark | Mosfet, Dual N Channel, 40V, 0.021Ohm, 6A, Soic-8, Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:40V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:6A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS8949_F085 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
92R5590
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Newark | Dual Mosfet, Dual N Channel, 6 A, 40 V, 0.021 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDS8949_F085 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now |
Part Details for FDS8949_F085
FDS8949_F085 CAD Models
FDS8949_F085 Part Data Attributes
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FDS8949_F085
onsemi
Buy Now
Datasheet
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FDS8949_F085
onsemi
40V, 6.0A, 21mΩ, SO-8, Logic Level Dual N-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Manufacturer Package Code | M08A | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS8949_F085
This table gives cross-reference parts and alternative options found for FDS8949_F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8949_F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS8949_F085 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 40V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | FDS8949_F085 vs FDS8949_F085 |
| FDS8949 | Rochester Electronics LLC | Check for Price | 6A, 40V, 0.043ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 | FDS8949_F085 vs FDS8949 |
| FDS8949 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | FDS8949_F085 vs FDS8949 |
FDS8949_F085 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FDS8949-F085 is -40°C to 150°C.
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To ensure stability, it's recommended to use a minimum output capacitance of 10uF, and to follow the recommended PCB layout and component placement guidelines provided in the datasheet.
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The recommended input capacitor value is 1uF to 10uF, with a voltage rating of at least 25V.
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Yes, the FDS8949-F085 is suitable for high-reliability applications, as it's designed to meet the requirements of AEC-Q100, a standard for automotive-grade components.
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The power dissipation can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.