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Part Details for FDS8447 by onsemi
Results Overview of FDS8447 by onsemi
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
FDS8447 Information
FDS8447 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDS8447
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
67P3490
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Newark | N Channel Mosfet, 40V, 12.8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:12.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Onsemi FDS8447 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6497 |
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$0.4710 / $0.4770 | Buy Now |
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DISTI #
61M6329
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Newark | Mosfet Transistor, N Channel, 12.8 A, 40 V, 0.009 Ohm, 10 V, 1.8 V Rohs Compliant: Yes |Onsemi FDS8447 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 585 |
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$0.4510 | Buy Now |
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DISTI #
30M0750
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Newark | N Channel Mosfet, 40V, 12.8A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:12.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W Rohs Compliant: Yes |Onsemi FDS8447 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2280 / $0.3010 | Buy Now |
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DISTI #
25AC9570
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Newark | Fet 40V 10.5 Mohm So8 Rohs Compliant: Yes |Onsemi FDS8447 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5320 | Buy Now |
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DISTI #
FDS8447CT-ND
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DigiKey | MOSFET N-CH 40V 12.8A 8SOIC Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
19124 In Stock |
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$0.5388 / $1.2800 | Buy Now |
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DISTI #
FDS8447
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Avnet Americas | Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount - Tape and Reel (Alt: FDS8447) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel | 2500 |
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$0.2023 / $0.2066 | Buy Now |
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DISTI #
67P3490
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Avnet Americas | Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount - Product that comes on tape, but is not reeled (Alt: 67P3490) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks, 0 Days Container: Ammo Pack | 6497 Partner Stock |
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$0.8240 / $1.7000 | Buy Now |
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DISTI #
61M6329
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Avnet Americas | Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount - Product that comes on tape, but is not reeled (Alt: 61M6329) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 585 Partner Stock |
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$1.0200 / $1.9000 | Buy Now |
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DISTI #
FDS8447
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Avnet Americas | Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount - Tape and Reel (Alt: FDS8447) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
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$0.4330 / $0.4420 | Buy Now |
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DISTI #
512-FDS8447
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Mouser Electronics | MOSFETs 40V Single N-Channel PowerTrench MOSFET RoHS: Compliant | 13813 |
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$0.5380 / $1.2500 | Buy Now |
Part Details for FDS8447
FDS8447 CAD Models
FDS8447 Part Data Attributes
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FDS8447
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS8447
onsemi
N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 12.8 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS8447
This table gives cross-reference parts and alternative options found for FDS8447. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8447, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS8447 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.8A I(D), 40V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | FDS8447 vs FDS8447 |
| FDS8447 | Rochester Electronics LLC | Check for Price | 12.8A, 40V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 | FDS8447 vs FDS8447 |
FDS8447 Frequently Asked Questions (FAQ)
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The FDS8447 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the gate of the FDS8447 to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Refer to the application note for specific biasing recommendations.
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS8447 close to the power source, and use a solid ground plane to reduce inductance. Avoid using vias under the device, and keep the drain and source pins as close as possible.
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Use a voltage regulator or a zener diode to limit the voltage across the FDS8447. Add a current-sensing resistor and a fuse or a current-limiting circuit to prevent overcurrent conditions. Consider using a TVS diode or a varistor for additional protection.
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A gate drive circuit with a low impedance output, such as a dedicated gate driver IC or a totem pole configuration, is recommended to ensure fast switching times and minimize ringing. The gate drive voltage should be between 5V and 15V.