Part Details for FDS7096N3 by Rochester Electronics LLC
Results Overview of FDS7096N3 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDS7096N3 Information
FDS7096N3 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDS7096N3
FDS7096N3 CAD Models
FDS7096N3 Part Data Attributes
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FDS7096N3
Rochester Electronics LLC
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Datasheet
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FDS7096N3
Rochester Electronics LLC
14A, 30V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | FLMP, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS7096N3
This table gives cross-reference parts and alternative options found for FDS7096N3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS7096N3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STSJ25NF3LL | STMicroelectronics | Check for Price | 12A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, POWERSO-8 | FDS7096N3 vs STSJ25NF3LL |
| FDS7096N3 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | FDS7096N3 vs FDS7096N3 |
| HAT2116H | Renesas Electronics Corporation | Check for Price | 30A, 30V, 0.0153ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | FDS7096N3 vs HAT2116H |
| HAT2168H-EL-E | Renesas Electronics Corporation | Check for Price | Nch Single Power Mosfet 30V 30A 7.9Mohm Lfpak, LFPAK, /Embossed Tape | FDS7096N3 vs HAT2168H-EL-E |