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Transistors / Small Signal Field-Effect Transistors / FDS6930A
Datasheets
FDS6930A by:

Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 5.5A, 40mΩ, SOIC-8, 2500-REEL

Part Details for FDS6930A by onsemi

Results Overview of FDS6930A by onsemi

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FDS6930A Information

FDS6930A by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDS6930A

Part # Distributor Description Stock Price Buy
DISTI # 38C7176
Newark Dual N Channel Mosfet, 30V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:5.5A, Continuous Drain Current Id P Channel:5.5A Rohs Compliant: Yes |Onsemi FDS6930A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 85983256
Verical Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 827 Package Multiple: 1 Date Code: 2001 Americas - 2500
  • 827 $0.4535
  • 1,000 $0.4183
  • 10,000 $0.3729
  • 100,000 $0.3124
$0.3124 / $0.4535 Buy Now
DISTI # 85992244
Verical Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 827 Package Multiple: 1 Date Code: 1801 Americas - 2440
  • 827 $0.4535
  • 1,000 $0.4183
  • 10,000 $0.3729
  • 100,000 $0.3124
$0.3124 / $0.4535 Buy Now
Bristol Electronics   1
RFQ
Quest Components TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.6A I(D),SO 2151
  • 1 $6.4410
  • 253 $3.5426
  • 566 $3.2205
$3.2205 / $6.4410 Buy Now
Quest Components TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.6A I(D),SO 1
  • 1 $1.3500
$1.3500 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 5.5A, 30V, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 4940
  • 100 $0.4031
  • 500 $0.3628
  • 1,000 $0.3346
  • 10,000 $0.2983
  • 100,000 $0.2499
$0.2499 / $0.4031 Buy Now
DISTI # FDS6930A
TME Transistor: N-MOSFET x2, unipolar, 30V, 5.5A, 2W, SO8 Min Qty: 3 0
  • 3 $0.3640
  • 25 $0.3440
  • 100 $0.3040
  • 500 $0.2730
$0.2730 / $0.3640 RFQ
DISTI # FDS6930A
Avnet Silica Transistor MOSFET Array Dual NCH 30V 55A 8Pin SOIC TR (Alt: FDS6930A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDS6930A
EBV Elektronik Transistor MOSFET Array Dual NCH 30V 55A 8Pin SOIC TR (Alt: FDS6930A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 2420
RFQ

Part Details for FDS6930A

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FDS6930A Part Data Attributes

Parametric Data
FDS6930A onsemi
Buy Now Datasheet
Compare Parts:
FDS6930A onsemi Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 5.5A, 40mΩ, SOIC-8, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6930A

This table gives cross-reference parts and alternative options found for FDS6930A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6930A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDS6930A_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 FDS6930A vs FDS6930A_NL
FDS6930A Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 FDS6930A vs FDS6930A
Part Number Manufacturer Composite Price Description Compare
JANTXV2N5546 Temic Semiconductors Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, FDS6930A vs JANTXV2N5546
NDH8301NS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 FDS6930A vs NDH8301NS62Z
FDS6912A_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 FDS6930A vs FDS6912A_NL
FDC654PD87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDS6930A vs FDC654PD87Z
SI6966DQ-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 FDS6930A vs SI6966DQ-T1-E3
FDC654P Rochester Electronics LLC Check for Price 3600mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 FDS6930A vs FDC654P
NDS8410D84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 FDS6930A vs NDS8410D84Z
SI3458DV-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6 FDS6930A vs SI3458DV-T1-E3
NDS8410/D84Z Texas Instruments Check for Price 10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET FDS6930A vs NDS8410/D84Z
SI4416DYL86Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FDS6930A vs SI4416DYL86Z

FDS6930A Related Parts

FDS6930A Frequently Asked Questions (FAQ)

  • The FDS6930A can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-20 V).

  • Use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the heat sink. A copper pour or thermal vias can help reduce thermal resistance.

  • Yes, the FDS6930A can be used in switching applications, but be aware of the maximum switching frequency (typically 100 kHz) and ensure the device is properly biased to avoid overheating.

  • Use ESD protection devices, such as TVS diodes or ESD protection arrays, and follow proper handling and storage procedures to prevent ESD damage.

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