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N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ, SOIC-8, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDS6680AS by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Small Signal Field-Effect Transistor, 11.5A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 304 |
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$0.2975 / $0.4798 | Buy Now |
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Flip Electronics | Stock, ship today | 5000 |
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RFQ |
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FDS6680AS
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6680AS
onsemi
N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ, SOIC-8, 2500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOIC-8 | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi |
This table gives cross-reference parts and alternative options found for FDS6680AS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6680AS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FDS6680AS_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | FDS6680AS vs FDS6680AS_NL |
FDS6680AS | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDS6680AS vs FDS6680AS |
A good PCB layout for the FDS6680AS involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
To optimize the compensation network, start by selecting the desired crossover frequency and phase margin. Then, use the datasheet's compensation network design equations to calculate the required component values. Finally, use simulation tools or empirical methods to fine-tune the compensation network for optimal stability and transient response.
The maximum allowed voltage on the EN pin of the FDS6680AS is 6V. Exceeding this voltage may damage the device. It's recommended to use a voltage divider or a level shifter to ensure the EN pin voltage remains within the specified range.
Yes, the FDS6680AS can be used in a synchronous rectification topology. However, it's essential to ensure that the device is properly configured and that the synchronous rectifier is properly sized to handle the required current and voltage.
To handle thermal management, ensure good airflow around the device, use a heat sink if necessary, and follow the recommended PCB layout guidelines. Monitor the device's junction temperature (TJ) and adjust the design as needed to prevent overheating.