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Part Details for FDS6680A by onsemi
Results Overview of FDS6680A by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDS6680A Information
FDS6680A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDS6680A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78K5944
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Newark | N Channel Mosfet, 30V, 12.5A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:12.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FDS6680A RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2010 |
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$0.3000 | Buy Now |
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DISTI #
27AC5716
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Newark | Fet 30V 9.5 Mohm So8 Rohs Compliant: Yes |Onsemi FDS6680A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3470 / $0.3730 | Buy Now |
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DISTI #
87X5249
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Newark | Mosfet Transistor, N Channel, 12.5 A, 30 V, 9.5 Mohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FDS6680A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5300 / $0.5480 | Buy Now |
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DISTI #
FDS6680ACT-ND
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DigiKey | MOSFET N-CH 30V 12.5A 8SOIC Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1419 In Stock |
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$0.3410 / $0.9400 | Buy Now |
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DISTI #
FDS6680A
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Avnet Americas | Power MOSFET, N Channel, 30 V, 12.5 A, 0.0095 ohm, SOIC, Surface Mount - Tape and Reel (Alt: FDS6680A) RoHS: Compliant Min Qty: 569 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 10000 Partner Stock |
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$1.0353 / $1.0732 | Buy Now |
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DISTI #
78K5944
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Avnet Americas | Power MOSFET, N Channel, 30 V, 12.5 A, 0.0095 ohm, SOIC, Surface Mount - Product that comes on tape, but is not reeled (Alt: 78K5944) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 47 Weeks, 4 Days Container: Ammo Pack | 2010 Partner Stock |
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$0.5660 / $0.9610 | Buy Now |
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DISTI #
FDS6680A
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Avnet Americas | Power MOSFET, N Channel, 30 V, 12.5 A, 0.0095 ohm, SOIC, Surface Mount - Tape and Reel (Alt: FDS6680A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days Container: Reel | 0 |
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$0.3167 / $0.3283 | Buy Now |
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DISTI #
FDS6680A
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Avnet Americas | Power MOSFET, N Channel, 30 V, 12.5 A, 0.0095 ohm, SOIC, Surface Mount - Tape and Reel (Alt: FDS6680A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.3338 / $0.3553 | Buy Now |
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DISTI #
512-FDS6680A
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Mouser Electronics | MOSFETs SO-8 SGL N-CH 30V RoHS: Compliant | 1489 |
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$0.3480 / $0.9200 | Buy Now |
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Onlinecomponents.com | N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ RoHS: Compliant | 0 |
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$0.3208 / $0.3496 | Buy Now |
Part Details for FDS6680A
FDS6680A CAD Models
FDS6680A Part Data Attributes
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FDS6680A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6680A
onsemi
Single N-Channel, Logic Level, PowerTrench® MOSFET 30V, 12.5A, 9.5mΩ, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 | |
| Package Description | SOP-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12.5 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 160 pF | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 70 ns | |
| Turn-on Time-Max (ton) | 29 ns |
Alternate Parts for FDS6680A
This table gives cross-reference parts and alternative options found for FDS6680A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6680A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7821TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDS6680A vs IRF7821TR |
| IRF7821GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | FDS6680A vs IRF7821GPBF |
| FDS6680A-SBBI002 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS6680A vs FDS6680A-SBBI002 |
| FDS6680A-NBBI007A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS6680A vs FDS6680A-NBBI007A |
| FDS6680A-NF073 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS6680A vs FDS6680A-NF073 |
| UPC8026G-S08-R | Unisonic Technologies Co Ltd | Check for Price | Transistor | FDS6680A vs UPC8026G-S08-R |
FDS6680A Frequently Asked Questions (FAQ)
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A good PCB layout for the FDS6680A involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
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To optimize the FDS6680A for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, use a low-ESR output capacitor and optimize the inductor value to minimize switching losses. Furthermore, consider using a low-voltage, low-power mode for the controller IC.
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The FDS6680A has a thermal pad that must be connected to a thermal plane on the PCB to dissipate heat. Ensure good thermal conductivity by using a thermal interface material and a heat sink if necessary. Also, keep the device away from other heat sources and ensure good airflow around the device.
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To troubleshoot issues with the FDS6680A, start by checking the PCB layout and ensuring that the device is properly decoupled. Verify that the input voltage is within the recommended range and that the output voltage is stable. Use an oscilloscope to check for oscillations or ringing on the switching node (SW) and output voltage. Consult the datasheet and application notes for guidance on troubleshooting specific issues.
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Yes, the FDS6680A is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and has a wide operating temperature range (-40°C to 150°C). However, ensure that the device is properly derated for the specific application and that the PCB design meets the required reliability standards.