Part Details for FDS6680A-NBBI007A by Fairchild Semiconductor Corporation
Results Overview of FDS6680A-NBBI007A by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
FDS6680A-NBBI007A Information
FDS6680A-NBBI007A by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDS6680A-NBBI007A
FDS6680A-NBBI007A CAD Models
FDS6680A-NBBI007A Part Data Attributes
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FDS6680A-NBBI007A
Fairchild Semiconductor Corporation
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Datasheet
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FDS6680A-NBBI007A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 12.5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES |
Alternate Parts for FDS6680A-NBBI007A
This table gives cross-reference parts and alternative options found for FDS6680A-NBBI007A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6680A-NBBI007A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS6680A-SBBI002 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS6680A-NBBI007A vs FDS6680A-SBBI002 |
| IRF7821GPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | FDS6680A-NBBI007A vs IRF7821GPBF |
| FDS6680A-NF073 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS6680A-NBBI007A vs FDS6680A-NF073 |
| IRF7821GTRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDS6680A-NBBI007A vs IRF7821GTRPBF |
| IRF7821UPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | FDS6680A-NBBI007A vs IRF7821UPBF |
| FDS6680A-OLDDIE | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS6680A-NBBI007A vs FDS6680A-OLDDIE |