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FDS4435A by:

Small Signal Field-Effect Transistor

Part Details for FDS4435A by onsemi

Results Overview of FDS4435A by onsemi

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FDS4435A Information

FDS4435A by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDS4435A

Part # Distributor Description Stock Price Buy
DISTI # 78K5929
Newark P Channel Mosfet, -30V, 9A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi FDS4435A RoHS: Compliant Min Qty: 625 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 58P0605
Newark P Channel Mosfet, -30V, 9A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi FDS4435A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
Bristol Electronics   Min Qty: 3 47
  • 3 $2.1000
  • 11 $1.5750
  • 33 $1.3125
$1.3125 / $2.1000 Buy Now
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),SO 37
  • 1 $2.8000
  • 3 $2.1000
  • 13 $1.7500
$1.7500 / $2.8000 Buy Now
DISTI # FDS4435A
EBV Elektronik Trans MOSFET PCH 30V 9A 8Pin SOIC N TR (Alt: FDS4435A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for FDS4435A

FDS4435A CAD Models

FDS4435A Part Data Attributes

FDS4435A onsemi
Buy Now Datasheet
Compare Parts:
FDS4435A onsemi Small Signal Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Date Of Intro 2017-11-07
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDS4435A Related Parts

FDS4435A Frequently Asked Questions (FAQ)

  • The FDS4435A can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and connect the source to ground through a resistor (e.g., 1 kΩ). This will provide a stable voltage reference.

  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS4435A near the power source and use a solid ground plane to reduce inductance. Avoid using vias or narrow traces near the device.

  • Yes, the FDS4435A is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).

  • Handle the FDS4435A with ESD-protective equipment and follow proper ESD-handling procedures. Use an ESD-protective wrist strap or mat, and ensure the workspace is ESD-safe.

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