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Small Signal Field-Effect Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDS4435A by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78K5929
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Newark | P Channel Mosfet, -30V, 9A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi FDS4435A RoHS: Compliant Min Qty: 625 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
58P0605
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Newark | P Channel Mosfet, -30V, 9A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi FDS4435A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Bristol Electronics | Min Qty: 3 | 47 |
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$1.3125 / $2.1000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),SO | 37 |
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$1.7500 / $2.8000 | Buy Now |
DISTI #
FDS4435A
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EBV Elektronik | Trans MOSFET PCH 30V 9A 8Pin SOIC N TR (Alt: FDS4435A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FDS4435A
onsemi
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Datasheet
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FDS4435A
onsemi
Small Signal Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Date Of Intro | 2017-11-07 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The FDS4435A can operate from -40°C to 150°C, making it suitable for high-reliability applications.
To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and connect the source to ground through a resistor (e.g., 1 kΩ). This will provide a stable voltage reference.
To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS4435A near the power source and use a solid ground plane to reduce inductance. Avoid using vias or narrow traces near the device.
Yes, the FDS4435A is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
Handle the FDS4435A with ESD-protective equipment and follow proper ESD-handling procedures. Use an ESD-protective wrist strap or mat, and ensure the workspace is ESD-safe.