Part Details for FDS3812 by Fairchild Semiconductor Corporation
Results Overview of FDS3812 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDS3812 Information
FDS3812 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDS3812
FDS3812 CAD Models
FDS3812 Part Data Attributes
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FDS3812
Fairchild Semiconductor Corporation
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Datasheet
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FDS3812
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.074 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS3812
This table gives cross-reference parts and alternative options found for FDS3812. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3812, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| FDS3812 | Rochester Electronics LLC | Check for Price | 3.4A, 80V, 0.074ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | FDS3812 vs FDS3812 |
| FDS3812_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | FDS3812 vs FDS3812_NL |
| FDS3812F011 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | FDS3812 vs FDS3812F011 |
| IRF7380TRPBF-1 | International Rectifier | Check for Price | Power Field-Effect Transistor | FDS3812 vs IRF7380TRPBF-1 |
| IRF7380TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | FDS3812 vs IRF7380TRPBF |
| FDS3812L86Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | FDS3812 vs FDS3812L86Z |
| IRF7380TRPBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | FDS3812 vs IRF7380TRPBF-1 |
| IRF7380PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | FDS3812 vs IRF7380PBF |
| IRF7380HR | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.9A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDS3812 vs IRF7380HR |
| IRF7380PBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDS3812 vs IRF7380PBF-1 |
FDS3812 Frequently Asked Questions (FAQ)
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The FDS3812 can operate from -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, the FDS3812 requires a minimum of 2.5V on the gate-source voltage (Vgs) and a maximum of 10V on the drain-source voltage (Vds). Additionally, the gate current (Ig) should be limited to 100mA.
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The FDS3812 has a maximum continuous drain current (Id) rating of 3.8A, and a maximum pulsed drain current rating of 11.4A.
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To protect the FDS3812 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.
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To minimize parasitic inductance and ensure optimal performance, use a compact PCB layout with short leads and a solid ground plane. Place the FDS3812 close to the power source and use a Kelvin connection for the source pin.