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Part Details for FDPF8N60ZUT by onsemi
Results Overview of FDPF8N60ZUT by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FDPF8N60ZUT Information
FDPF8N60ZUT by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDPF8N60ZUT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Flip Electronics | Stock, ship today | 1000 |
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RFQ |
Part Details for FDPF8N60ZUT
FDPF8N60ZUT CAD Models
FDPF8N60ZUT Part Data Attributes
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FDPF8N60ZUT
onsemi
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Datasheet
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FDPF8N60ZUT
onsemi
Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 600 V, 6.5 A, 1.35 Ω, TO-220F, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 1.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 34.5 W | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDPF8N60ZUT Frequently Asked Questions (FAQ)
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The recommended PCB footprint for FDPF8N60ZUT is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure reliable operation of FDPF8N60ZUT in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 150°C.
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The maximum allowed voltage transient for FDPF8N60ZUT is 650V, but it is recommended to limit the voltage transient to 600V or less to ensure reliable operation.
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Yes, FDPF8N60ZUT can be used in switching applications, but it is recommended to follow proper switching guidelines, such as using a gate driver, ensuring proper dead time, and limiting the switching frequency to 100kHz or less.
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To protect FDPF8N60ZUT from electrostatic discharge (ESD), it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging.