-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FDPF55N06 by onsemi
Results Overview of FDPF55N06 by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDPF55N06 Information
FDPF55N06 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDPF55N06
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
07AH3940
|
Newark | Mosfet, N-Ch, 60V, 55A, To-220F, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.018Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Onsemi FDPF55N06 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 561 |
|
$1.2900 / $2.5000 | Buy Now |
|
DISTI #
FDPF55N06-ND
|
DigiKey | MOSFET N-CH 60V 55A TO220F Min Qty: 1 Lead time: 7 Weeks Container: Tube |
3643 In Stock |
|
$0.7556 / $2.1800 | Buy Now |
|
DISTI #
FDPF55N06
|
Avnet Americas | Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF55N06) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 7 Weeks, 0 Days Container: Tube | 0 |
|
$0.7112 / $0.7372 | Buy Now |
|
DISTI #
512-FDPF55N06
|
Mouser Electronics | MOSFETs 60V 55A N-Chan UniFET MOSFET RoHS: Compliant | 7080 |
|
$0.7680 / $2.1400 | Buy Now |
|
DISTI #
V36:1790_06359359
|
Arrow Electronics | Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 50 Package Multiple: 50 Lead time: 7 Weeks Date Code: 2238 | Americas - 9 |
|
$0.7075 / $0.8498 | Buy Now |
|
|
Onlinecomponents.com | N-Channel Power MOSFET, UniFETTM, 60 V, 55 A, 22 mΩ, TO-220F RoHS: Compliant |
1000 In Stock |
|
$0.7370 / $1.1690 | Buy Now |
|
DISTI #
85980479
|
Verical | Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 295 Package Multiple: 1 Date Code: 2201 | Americas - 114498 |
|
$1.2750 | Buy Now |
|
DISTI #
85985847
|
Verical | Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 295 Package Multiple: 1 Date Code: 2301 | Americas - 13000 |
|
$1.2750 | Buy Now |
|
DISTI #
83591536
|
Verical | Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 50 Package Multiple: 50 Date Code: 2421 | Americas - 1000 |
|
$0.9698 / $1.5210 | Buy Now |
|
DISTI #
85991642
|
Verical | Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 295 Package Multiple: 1 Date Code: 1901 | Americas - 900 |
|
$1.2750 | Buy Now |
Part Details for FDPF55N06
FDPF55N06 CAD Models
FDPF55N06 Part Data Attributes
|
|
FDPF55N06
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDPF55N06
onsemi
Power MOSFET, N-Channel, UniFETTM, 60 V, 55 A, 22 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 7 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 480 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDPF55N06 Frequently Asked Questions (FAQ)
-
The maximum junction temperature for the FDPF55N06 is 175°C. Exceeding this temperature can lead to device failure.
-
To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V and 10V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, a gate resistor (Rg) should be used to limit the gate current.
-
To minimize parasitic inductance and capacitance, the FDPF55N06 should be placed close to the power source, and the PCB traces should be as short and wide as possible. Additionally, a ground plane should be used to reduce electromagnetic interference (EMI).
-
Yes, the FDPF55N06 can be used in high-frequency switching applications up to 1 MHz. However, the device's switching characteristics, such as rise and fall times, should be considered to ensure optimal performance.
-
To protect the FDPF55N06 from ESD, handling precautions should be taken, such as using an anti-static wrist strap or mat, and storing the device in an anti-static bag. Additionally, ESD protection devices, such as TVS diodes, can be used to protect the device from ESD events.