Part Details for FDPF55N06 by Rochester Electronics LLC
Results Overview of FDPF55N06 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDPF55N06 Information
FDPF55N06 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDPF55N06
FDPF55N06 CAD Models
FDPF55N06 Part Data Attributes
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FDPF55N06
Rochester Electronics LLC
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Datasheet
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FDPF55N06
Rochester Electronics LLC
55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 480 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDPF55N06
This table gives cross-reference parts and alternative options found for FDPF55N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDPF55N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFD16N06LE | Rochester Electronics LLC | Check for Price | 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | FDPF55N06 vs RFD16N06LE |
| SSP4N90A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs SSP4N90A |
| FQPF10N60C | Rochester Electronics LLC | Check for Price | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FDPF55N06 vs FQPF10N60C |
| IPB04N03LAG | Rochester Electronics LLC | Check for Price | 80A, 25V, 0.0064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | FDPF55N06 vs IPB04N03LAG |
| SPP16N50C3 | Rochester Electronics LLC | Check for Price | 16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | FDPF55N06 vs SPP16N50C3 |
| SPI11N65C3 | Rochester Electronics LLC | Check for Price | 11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | FDPF55N06 vs SPI11N65C3 |
| NTD4806N1G | onsemi | Check for Price | 11A, 30V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3 | FDPF55N06 vs NTD4806N1G |
| SPU21N05L | Siemens | Check for Price | Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDPF55N06 vs SPU21N05L |
| IRF830R | Rochester Electronics LLC | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | FDPF55N06 vs IRF830R |
| SSH10N80A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 10A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FDPF55N06 vs SSH10N80A |