Part Details for FDPF55N06 by Fairchild Semiconductor Corporation
Results Overview of FDPF55N06 by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDPF55N06 Information
FDPF55N06 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDPF55N06
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDPF55N06-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 5 Min Qty: 283 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
129398 In Stock |
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$1.0600 | Buy Now |
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Bristol Electronics | 40 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 55A, 60V, N-Channel, MOSFET, TO-220AB RoHS: Not Compliant Status: Active Min Qty: 1 | 46004 |
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$0.6347 / $1.0200 | Buy Now |
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Vyrian | Transistors | 39242 |
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RFQ |
Part Details for FDPF55N06
FDPF55N06 CAD Models
FDPF55N06 Part Data Attributes
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FDPF55N06
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDPF55N06
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220F | |
| Package Description | TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 480 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDPF55N06
This table gives cross-reference parts and alternative options found for FDPF55N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDPF55N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH16N50P3 | IXYS Corporation | $2.3874 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | FDPF55N06 vs IXFH16N50P3 |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs IRFS620 |
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | FDPF55N06 vs NDP706A |
| FQPF5N50C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FDPF55N06 vs FQPF5N50C |
| FQP5P20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.8A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs FQP5P20 |
| FQP6N60C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs FQP6N60C |
| STP7NA40 | STMicroelectronics | Check for Price | 6.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs STP7NA40 |
| MTD10N05E-1 | Motorola Mobility LLC | Check for Price | 10A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | FDPF55N06 vs MTD10N05E-1 |
| FQP13N10 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs FQP13N10 |
| FQP9N25C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDPF55N06 vs FQP9N25C |
FDPF55N06 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FDPF55N06 is not explicitly stated in the datasheet. However, Fairchild Semiconductor provides an SOA curve in the application note AN-9010, which can be used to determine the maximum safe operating area for the device.
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To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to ensure good thermal contact between the device and the heat sink. The thermal resistance of the heat sink and the thermal interface material should be minimized. Additionally, the device should be operated within the recommended temperature range to prevent overheating.
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The recommended gate drive voltage for the FDPF55N06 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance.
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To prevent shoot-through current in a half-bridge configuration, it is recommended to use a dead-time controller or a dedicated gate driver IC that provides a dead-time between the turn-off of one device and the turn-on of the other device. Additionally, the gate drive voltage and the gate resistance should be optimized to minimize the overlap between the two devices.
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The maximum allowed drain-source voltage (Vds) for the FDPF55N06 is 55V. Exceeding this voltage may result in device damage or failure.