Part Details for FDP75N08A by onsemi
Results Overview of FDP75N08A by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
FDP75N08A Information
FDP75N08A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDP75N08A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
04M9108
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Newark | N Channel Mosfet, 75V, 75A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:75A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FDP75N08A RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
FDP75N08A
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TME | Transistor: N-MOSFET, unipolar, 75V, 47A, Idm: 300A, 137W, TO220-3 Min Qty: 1 | 0 |
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$1.3800 / $2.1600 | RFQ |
Part Details for FDP75N08A
FDP75N08A CAD Models
FDP75N08A Part Data Attributes
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FDP75N08A
onsemi
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Datasheet
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FDP75N08A
onsemi
Power MOSFET, N-Channel, UniFETTM, 75 V, 75 A, 11 mΩ, TO-220, TO-220-3, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 1738 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 137 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDP75N08A
This table gives cross-reference parts and alternative options found for FDP75N08A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP75N08A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDP75N08A | Fairchild Semiconductor Corporation | Check for Price | N-Channel UniFETTM MOSFET 75V, 75A, 11mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL | FDP75N08A vs FDP75N08A |
FDP75N08A Frequently Asked Questions (FAQ)
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The maximum junction temperature that the FDP75N08A can withstand is 175°C.
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To ensure the FDP75N08A is properly biased, make sure to provide a stable input voltage, use a suitable gate resistor, and ensure the drain-source voltage is within the recommended range.
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To minimize parasitic inductance, use a compact PCB layout, keep the drain and source pins close together, and use a solid ground plane. Avoid using vias under the device and keep the thermal pad connected to a solid ground plane.
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Yes, the FDP75N08A is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly biased, and the PCB layout is optimized for high-frequency operation.
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To protect the FDP75N08A from ESD, use ESD-sensitive handling procedures, store the devices in anti-static packaging, and use ESD protection devices such as TVS diodes or ESD suppressors in the circuit.