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Part Details for FDP65N06 by onsemi
Results Overview of FDP65N06 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDP65N06 Information
FDP65N06 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDP65N06
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
04M9106
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Newark | N Channel Mosfet, 60V, 65A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:65A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Onsemi FDP65N06 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.9070 / $1.1400 | Buy Now |
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Flip Electronics | Stock, ship today | 5545 |
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RFQ |
Part Details for FDP65N06
FDP65N06 CAD Models
FDP65N06 Part Data Attributes
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FDP65N06
onsemi
Buy Now
Datasheet
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Compare Parts:
FDP65N06
onsemi
Power MOSFET, N-Channel, UniFETTM, 60 V, 65 A, 16 mΩ, TO-220, TO-220-3, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 430 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDP65N06 Frequently Asked Questions (FAQ)
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The maximum junction temperature that the FDP65N06 can withstand is 175°C. Exceeding this temperature can lead to device failure.
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To ensure proper biasing, the FDP65N06 requires a gate-source voltage (Vgs) between 4V and 10V, and a drain-source voltage (Vds) between 10V and 60V. Additionally, a gate resistor (Rg) between 1kΩ and 10kΩ is recommended to prevent oscillations.
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To minimize parasitic inductance and capacitance, it is recommended to use a compact PCB layout with short leads and a solid ground plane. The drain and source pins should be connected to the PCB with minimal lead length, and the gate pin should be connected to a low-impedance signal source.
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Yes, the FDP65N06 can be used in high-frequency switching applications up to 1 MHz. However, it is essential to ensure proper PCB layout, decoupling, and gate drive to minimize ringing and oscillations.
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To protect the FDP65N06 from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected workstations and tools. Additionally, the device should be stored in an anti-static package or bag when not in use.