Part Details for FDP65N06 by Fairchild Semiconductor Corporation
Results Overview of FDP65N06 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDP65N06 Information
FDP65N06 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDP65N06
FDP65N06 CAD Models
FDP65N06 Part Data Attributes
|
|
FDP65N06
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDP65N06
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220 | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 430 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDP65N06 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the FDP65N06 is -55°C to 150°C.
-
To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V to 10V, and the drain-source voltage (Vds) should be between 10V to 60V.
-
The maximum continuous drain current (Id) rating for the FDP65N06 is 65A.
-
To protect the FDP65N06, use a voltage regulator to limit the voltage, and consider adding overcurrent protection devices such as fuses or current-sensing resistors.
-
The thermal resistance (RθJA) of the FDP65N06 is 40°C/W.