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N-Channel PowerTrench® MOSFET 80V, 130A, 2.4mΩ, PQFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS86350 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
46AC0801
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Newark | Mosfet, N-Ch, 80V, 130A, Power 56-8, Transistor Polarity:N Channel, Continuous Drain Current Id:130A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.002Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.8V, Power Rohs Compliant: Yes |Onsemi FDMS86350 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1339 |
|
$2.2100 / $4.6800 | Buy Now |
DISTI #
96W6426
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Newark | Fet 80V 2.4 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS86350 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.7300 / $2.1000 | Buy Now |
DISTI #
FDMS86350CT-ND
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DigiKey | MOSFET N-CH 80V 25A/130A POWER56 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
13526 In Stock |
|
$1.7492 / $4.7700 | Buy Now |
DISTI #
FDMS86350
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Avnet Americas | Trans MOSFET N-CH 80V 25A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86350) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.6463 / $1.7066 | Buy Now |
DISTI #
512-FDMS86350
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Mouser Electronics | MOSFETs 80V N-Channel PowerTrench MOSFET RoHS: Compliant | 5163 |
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$1.7400 / $4.6800 | Buy Now |
DISTI #
E02:0323_07071004
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Arrow Electronics | Trans MOSFET N-CH 80V 25A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Date Code: 2450 | Europe - 3000 |
|
$1.7826 | Buy Now |
DISTI #
V72:2272_06338206
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Arrow Electronics | Trans MOSFET N-CH 80V 25A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2401 Container: Cut Strips | Americas - 1056 |
|
$1.8780 / $2.9760 | Buy Now |
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Onlinecomponents.com | N-Channel 80 V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6) RoHS: Compliant | 0 |
|
$1.6500 / $1.8400 | Buy Now |
DISTI #
87720355
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Verical | Trans MOSFET N-CH 80V 25A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2450 | Americas - 3000 |
|
$1.7735 | Buy Now |
DISTI #
87892487
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Verical | Trans MOSFET N-CH 80V 25A 8-Pin PQFN EP T/R Min Qty: 16 Package Multiple: 1 | Americas - 1700 |
|
$1.6800 / $2.1500 | Buy Now |
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FDMS86350
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86350
onsemi
N-Channel PowerTrench® MOSFET 80V, 130A, 2.4mΩ, PQFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-8 | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Manufacturer Package Code | 483AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 864 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 25 A | |
Drain-source On Resistance-Max | 0.0024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A good PCB layout for the FDMS86350 involves keeping the high-current paths short and wide, using multiple vias to connect the drain pad to the thermal pad, and ensuring good thermal conductivity to dissipate heat efficiently.
To optimize the gate drive circuit, use a low-impedance gate drive circuit with a high-current gate driver, and ensure the gate drive voltage is within the recommended range (typically 10-15V). Also, consider using a gate resistor to slow down the turn-on and turn-off times to reduce EMI.
The maximum allowed junction temperature for the FDMS86350 is 150°C. It's essential to ensure the device operates within this temperature range to prevent damage and ensure reliable operation.
To protect the FDMS86350 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
The recommended operating frequency range for the FDMS86350 is up to 1 MHz, but it can be operated at higher frequencies with proper design and layout considerations.