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N-Channel Shielded Gate PowerTrench® MOSFET 150V, 16A, 51mΩ, PQFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS86252 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85W3153
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Newark | Mosfet, N Channel, 150V, 0.0439Ohm, 16A, Power 56-8, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:69W Rohs Compliant: Yes |Onsemi FDMS86252 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.3500 | Buy Now |
DISTI #
92R5567
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Newark | Mosfet Transistor, N Channel, 16 A, 150 V, 0.0439 Ohm, 10 V, 2.8 V Rohs Compliant: Yes |Onsemi FDMS86252 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.9490 / $1.2000 | Buy Now |
DISTI #
FDMS86252CT-ND
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DigiKey | MOSFET N-CH 150V 4.6A/16A 8PQFN Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6144 In Stock |
|
$0.9487 / $2.8300 | Buy Now |
DISTI #
FDMS86252
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Avnet Americas | Trans MOSFET N-CH 150V 4.6A 8-Pin QFN EP T/R - Tape and Reel (Alt: FDMS86252) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.8929 / $0.9256 | Buy Now |
DISTI #
512-FDMS86252
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Mouser Electronics | MOSFETs 150V N-Channel PowerTrench MOSFET RoHS: Compliant | 4800 |
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$0.9480 / $2.7700 | Buy Now |
DISTI #
E02:0323_02823218
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Arrow Electronics | Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2502 | Europe - 3000 |
|
$0.9622 | Buy Now |
DISTI #
V72:2272_06338196
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Arrow Electronics | Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2337 Container: Cut Strips | Americas - 2110 |
|
$1.0187 / $1.5653 | Buy Now |
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Onlinecomponents.com | N-Channel Shielded Gate PowerTrench® MOSFET 150V, 16A, 51mΩ RoHS: Compliant | 0 |
|
$0.9090 / $1.0400 | Buy Now |
DISTI #
87702595
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Verical | Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2502 | Americas - 3000 |
|
$1.7015 | Buy Now |
DISTI #
87891670
|
Verical | Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R Min Qty: 29 Package Multiple: 1 | Americas - 2905 |
|
$0.9500 / $1.8400 | Buy Now |
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FDMS86252
onsemi
Buy Now
Datasheet
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FDMS86252
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 150V, 16A, 51mΩ, PQFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-8 | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Manufacturer Package Code | 483AE | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
The maximum allowed current is 2A per channel. Exceeding this limit may cause overheating or damage to the device.
Use a TVS diode or a zener diode to clamp overvoltage transients. Implement ESD protection using a diode array or a dedicated ESD protection IC.
The recommended operating temperature range is -40°C to 150°C. Operating outside this range may affect device performance and reliability.