Part Details for FDMS86150A by onsemi
Results Overview of FDMS86150A by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
FDMS86150A Information
FDMS86150A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMS86150A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91AH7510
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Newark | Fet 100V 4.85 Mohm Pqfn56/ Reel |Onsemi FDMS86150A RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.9600 | Buy Now |
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DISTI #
488-FDMS86150ACT-ND
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DigiKey | FET 100V 4.85 MOHM PQFN56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2750 In Stock |
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$1.8354 / $4.6000 | Buy Now |
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DISTI #
FDMS86150A
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Avnet Americas | Transistor MOSFET N-CH 100V 80A 4.85mOhm 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86150A) RoHS: Compliant Min Qty: 348 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 16515 Partner Stock |
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$1.6941 / $1.7561 | Buy Now |
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DISTI #
FDMS86150A
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Avnet Americas | Transistor MOSFET N-CH 100V 80A 4.85mOhm 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86150A) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
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$1.7274 / $1.7906 | Buy Now |
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DISTI #
863-FDMS86150A
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Mouser Electronics | MOSFETs FET 100V 4.85 MOHM PQFN56 RoHS: Compliant | 5616 |
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$1.8300 / $4.5100 | Buy Now |
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Onlinecomponents.com | Transistor Mosfet N-ch 100V 80A 4.85MOHM 8-PIN Pqfn T/r RoHS: Compliant | 0 |
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$1.8200 / $4.9900 | Buy Now |
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Rochester Electronics | FDMS8615 - MOSFET N-Channel, Shielded Gate, POWERTRENCH RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 7704 |
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$1.5400 / $1.9300 | Buy Now |
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DISTI #
FDMS86150A
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$1.8400 | Buy Now |
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DISTI #
FDMS86150A
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Avnet Silica | Transistor MOSFET NCH 100V 80A 485mOhm 8Pin PQFN TR (Alt: FDMS86150A) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 31515 |
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RFQ |
Part Details for FDMS86150A
FDMS86150A CAD Models
FDMS86150A Part Data Attributes
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FDMS86150A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86150A
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ, PQFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | PQFN-8 | |
| Package Description | QFN-8 | |
| Manufacturer Package Code | 483AF | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 726 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.00485 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 45 pF | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 113 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 57 ns | |
| Turn-on Time-Max (ton) | 51 ns |
FDMS86150A Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the device. Additionally, keeping the PCB traces away from the device and using a heat sink can help to improve thermal performance.
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To ensure reliable operation in high-temperature environments, it is recommended to follow the device's thermal derating guidelines, use a heat sink, and ensure good airflow around the device. Additionally, selecting components with high-temperature ratings and using thermal interface materials can help to improve reliability.
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Key considerations for EMI and RFI mitigation include using a shielded enclosure, keeping the device away from antennas and other EMI sources, using EMI filters, and following good PCB layout practices such as separating analog and digital circuits and using ground planes.
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To optimize the device for low-power operation, it is recommended to use the lowest possible supply voltage, reduce the switching frequency, and use a low-power mode when possible. Additionally, using a high-efficiency power supply and minimizing the number of active circuits can help to reduce power consumption.
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Recommended test and measurement techniques for characterizing the device include using a curve tracer or oscilloscope to measure voltage and current waveforms, and using a thermal camera or thermocouple to measure temperature. Additionally, using a network analyzer or spectrum analyzer can help to measure frequency response and noise characteristics.