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N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ, DFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS8320LDC by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
63W2864
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Newark | Fet 40V 1.1 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS8320LDC RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.0000 / $1.2200 | Buy Now |
DISTI #
FDMS8320LDCCT-ND
|
DigiKey | MOSFET N-CH 40V 44A DLCOOL56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3414 In Stock |
|
$1.3328 / $3.5200 | Buy Now |
DISTI #
FDMS8320LDC
|
Avnet Americas | Power MOSFET, N Channel, 40 V, 192 A, 0.0008 ohm, DFN, Surface Mount - Tape and Reel (Alt: FDMS8320LDC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 3000 Factory Stock |
|
$0.9696 / $0.9906 | Buy Now |
DISTI #
512-FDMS8320LDC
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Mouser Electronics | MOSFETs 40V 130A Dual Cool PowerTrench MOSFET RoHS: Compliant | 3055 |
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$1.3600 / $3.4500 | Buy Now |
DISTI #
E02:0323_06873436
|
Arrow Electronics | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2429 | Europe - 3000 |
|
$1.4030 | Buy Now |
|
Onlinecomponents.com | N-Channel Power Trench® MOSFET, Dual CoolTM 56, 40V, 192A, 1.1mΩ RoHS: Compliant | 0 |
|
$1.0100 / $2.1100 | Buy Now |
DISTI #
85985071
|
Verical | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R Min Qty: 210 Package Multiple: 1 Date Code: 1701 | Americas - 117962 |
|
$1.7875 | Buy Now |
DISTI #
85990417
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Verical | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R Min Qty: 210 Package Multiple: 1 Date Code: 2101 | Americas - 74113 |
|
$1.7875 | Buy Now |
DISTI #
85982252
|
Verical | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R Min Qty: 210 Package Multiple: 1 Date Code: 2201 | Americas - 27512 |
|
$1.7875 | Buy Now |
DISTI #
87544313
|
Verical | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R Min Qty: 3000 Package Multiple: 3000 | Americas - 3000 |
|
$1.3982 | Buy Now |
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FDMS8320LDC
onsemi
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Datasheet
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FDMS8320LDC
onsemi
N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ, DFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DFN-8 | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Manufacturer Package Code | 506EG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 661 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 44 A | |
Drain-source On Resistance-Max | 0.0011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF capacitor is recommended for CBYP. Additionally, the input voltage should be filtered to prevent noise and ripple.
The maximum allowed current through the device is 2A. Exceeding this limit may cause the device to overheat or fail.
An overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit can be implemented to protect the device from voltage transients and faults. A zener diode or a voltage regulator can be used for OVP, and a voltage supervisor IC can be used for UVLO.
The recommended operating temperature range for the FDMS8320LDC is -40°C to 150°C. Operating the device outside this range may affect its performance and reliability.