-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-Channel PowerTrench® MOSFET 30V, 9.5mΩ, PQFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS7694 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
92R5559
|
Newark | Mosfet Transistor, N Channel, 20 A, 30 V, 0.0076 Ohm, 10 V, 2 V |Onsemi FDMS7694 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2220 / $0.2840 | Buy Now |
DISTI #
FDMS7694CT-ND
|
DigiKey | MOSFET N-CH 30V 13.2A/20A 8PQFN Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2917 In Stock |
|
$0.1995 / $0.4600 | Buy Now |
DISTI #
FDMS7694
|
Avnet Americas | Power MOSFET, N Channel, 30 V, 20 A, 0.0076 ohm, Power 56, Surface Mount - Tape and Reel (Alt: FDMS7694) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
|
$0.2498 / $0.2550 | Buy Now |
DISTI #
512-FDMS7694
|
Mouser Electronics | MOSFETs 30V NCh PowerTrench MOSFET RoHS: Compliant | 208551 |
|
$0.2860 / $0.4500 | Buy Now |
|
Onlinecomponents.com | Trans Mosfet N-ch Si 30V 13.2A 8-PIN Pqfn Ep T/r / Mosfet N-ch 30V POWER56 RoHS: Compliant | 0 |
|
$0.1926 / $0.2157 | Buy Now |
DISTI #
85979816
|
Verical | Trans MOSFET N-CH Si 30V 13.2A 8-Pin PQFN EP T/R Min Qty: 804 Package Multiple: 1 Date Code: 2001 | Americas - 2504 |
|
$0.4665 | Buy Now |
|
Rochester Electronics | Power Field-Effect Transistor, 13.2A, 30V, 0.0095ohm, N-Channel, MOSFET, MO-240AA RoHS: Not Compliant Status: Active Min Qty: 1 | 2504 |
|
$0.2314 / $0.3732 | Buy Now |
DISTI #
FDMS7694
|
TME | Transistor: N-MOSFET, unipolar, 30V, 20A, Idm: 50A, 27W, PQFN8 Min Qty: 1 | 0 |
|
$0.3020 / $1.0770 | RFQ |
DISTI #
FDMS7694
|
IBS Electronics | TRANS MOSFET N-CH SI 30V 13.2A 8-PIN PQFN EP T/R / MOSFET N-CH 30V POWER56 Min Qty: 6000 Package Multiple: 1 | 0 |
|
$0.3055 / $0.3185 | Buy Now |
DISTI #
FDMS7694
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 | 0 |
|
$0.2000 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FDMS7694
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDMS7694
onsemi
N-Channel PowerTrench® MOSFET 30V, 9.5mΩ, PQFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-8 | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Manufacturer Package Code | 483AE | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 21 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 13.2 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 27 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDMS7694. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS7694, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDS6680A | onsemi | $0.4486 | Single N-Channel, Logic Level, PowerTrench® MOSFET 30V, 12.5A, 9.5mΩ, SOIC-8, 2500-REEL | FDMS7694 vs FDS6680A |
IRF7821TRPBF | Infineon Technologies AG | $0.6322 | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDMS7694 vs IRF7821TRPBF |
IRF7821TRPBFXTMA1 | Infineon Technologies AG | $0.8491 | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDMS7694 vs IRF7821TRPBFXTMA1 |
IRF7821 | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDMS7694 vs IRF7821 |
MDS1654URH | MagnaChip Semiconductor Ltd | Check for Price | Small Signal Field-Effect Transistor, | FDMS7694 vs MDS1654URH |
IRF7821GTRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDMS7694 vs IRF7821GTRPBF |
BSO4420 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDMS7694 vs BSO4420 |
STS14N3LLH5 | STMicroelectronics | Check for Price | 14A, 30V, 0.0077ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 | FDMS7694 vs STS14N3LLH5 |
IRF7821TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDMS7694 vs IRF7821TRPBF |
DMN3010LSS-13 | Diodes Incorporated | Check for Price | Power Field-Effect Transistor, 16A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | FDMS7694 vs DMN3010LSS-13 |
A good PCB layout for the FDMS7694 involves keeping the high-frequency traces short and away from the edges of the board, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
To optimize the FDMS7694 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, minimize the voltage on the VIN pin and use a low-quiescent-current LDO regulator to power the device. Furthermore, consider using a low-power mode or shutdown mode if available.
The maximum allowed voltage on the VIN pin of the FDMS7694 is 18V. Exceeding this voltage can cause permanent damage to the device.
To ensure the FDMS7694 is stable and reliable, follow the recommended operating conditions, ensure proper thermal management, and use a stable input voltage. Additionally, consider using a soft-start circuit to reduce inrush current and prevent voltage drops during startup.
The FDMS7694 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at high temperatures. Ensure proper thermal management and consider using a heat sink or thermal interface material to maintain a safe operating temperature.