Datasheets
FDMS5352 by:

N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ, PQFN-8, 3000-REEL

Part Details for FDMS5352 by onsemi

Results Overview of FDMS5352 by onsemi

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FDMS5352 Information

FDMS5352 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS5352

Part # Distributor Description Stock Price Buy
DISTI # 08N9285
Newark Mosfet Transistor, N Channel, 13.6 A, 60 V, 0.0056 Ohm, 10 V, 1.8 V |Onsemi FDMS5352 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $1.5700
  • 6,000 $1.4700
  • 12,000 $1.3600
  • 18,000 $1.3100
  • 30,000 $1.2900
$1.2900 / $1.5700 Buy Now
DISTI # FDMS5352CT-ND
DigiKey MOSFET N-CH 60V 13.6A/49A 8PQFN Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3435
In Stock
  • 1 $2.6300
  • 10 $2.0910
  • 100 $1.7136
  • 500 $1.5981
  • 3,000 $1.3056
$1.3056 / $2.6300 Buy Now
DISTI # FDMS5352
Avnet Americas - Tape and Reel (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.2738
  • 6,000 $1.2584
  • 12,000 $1.2434
  • 18,000 $1.2376
  • 24,000 $1.2288
$1.2288 / $1.2738 Buy Now
DISTI # 512-FDMS5352
Mouser Electronics MOSFETs 60V N-Channel PowerTrench RoHS: Compliant 11230
  • 1 $2.0500
  • 10 $1.7700
  • 100 $1.5300
  • 250 $1.5200
  • 500 $1.3900
  • 1,000 $1.3300
  • 3,000 $1.3000
$1.3000 / $2.0500 Buy Now
DISTI # V72:2272_06338066
Arrow Electronics Trans MOSFET N-CH Si 60V 13.6A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2252 Container: Cut Strips Americas - 2
  • 0 $1.3434
  • 1 $0.7432
$0.7432 / $1.3434 Buy Now
Onlinecomponents.com MOSFET, N CH, 60V, 13.6A, POWER56, Transistor Polarity: N Channel, Continuous Drain C RoHS: Compliant 0
  • 250 $1.3700
  • 500 $1.3500
  • 1,000 $1.2900
  • 3,000 $1.2700
  • 6,000 $1.2500
$1.2500 / $1.3700 Buy Now
DISTI # FDMS5352
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $1.3100
$1.3100 Buy Now
DISTI # FDMS5352
Avnet Asia Power MOSFET, N Channel, 60 V, 49 A, 6.7 mOhm, PQFN, 8 Pins, Surface Mount (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days 0
  • 3,000 $1.3743
  • 6,000 $1.3565
  • 9,000 $1.3391
  • 15,000 $1.3221
  • 30,000 $1.2895
  • 75,000 $1.2584
  • 150,000 $1.2288
$1.2288 / $1.3743 Buy Now
DISTI # FDMS5352
Avnet Silica (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS5352
EBV Elektronik (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDMS5352

FDMS5352 CAD Models

FDMS5352 Part Data Attributes

FDMS5352 onsemi
Buy Now Datasheet
Compare Parts:
FDMS5352 onsemi N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ, PQFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Package Description ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 13.6 A
Drain-source On Resistance-Max 0.0067 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDMS5352

This table gives cross-reference parts and alternative options found for FDMS5352. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS5352, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDMS5352 Rochester Electronics LLC Check for Price 13.6A, 60V, 0.0067ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN FDMS5352 vs FDMS5352

FDMS5352 Related Parts

FDMS5352 Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range.

  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the input capacitor (CIN). This value provides a good balance between filtering and stability.

  • Choose an output capacitor with low ESR (Equivalent Series Resistance) and a capacitance value between 10uF to 47uF. A 22uF to 33uF X5R or X7R ceramic capacitor is a good starting point.

  • Keep high-current paths short and wide, using thick copper traces (at least 1 oz). Avoid sharp corners and use rounded edges to reduce current density. Use multiple vias to connect the device to the PCB's ground plane.

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