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N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ, PQFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS5352 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08N9285
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Newark | Mosfet Transistor, N Channel, 13.6 A, 60 V, 0.0056 Ohm, 10 V, 1.8 V |Onsemi FDMS5352 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.2900 / $1.5700 | Buy Now |
DISTI #
FDMS5352CT-ND
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DigiKey | MOSFET N-CH 60V 13.6A/49A 8PQFN Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3435 In Stock |
|
$1.3056 / $2.6300 | Buy Now |
DISTI #
FDMS5352
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Avnet Americas | - Tape and Reel (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel | 0 |
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$1.2288 / $1.2738 | Buy Now |
DISTI #
512-FDMS5352
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Mouser Electronics | MOSFETs 60V N-Channel PowerTrench RoHS: Compliant | 11230 |
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$1.3000 / $2.0500 | Buy Now |
DISTI #
V72:2272_06338066
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Arrow Electronics | Trans MOSFET N-CH Si 60V 13.6A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2252 Container: Cut Strips | Americas - 2 |
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$0.7432 / $1.3434 | Buy Now |
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Onlinecomponents.com | MOSFET, N CH, 60V, 13.6A, POWER56, Transistor Polarity: N Channel, Continuous Drain C RoHS: Compliant | 0 |
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$1.2500 / $1.3700 | Buy Now |
DISTI #
FDMS5352
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$1.3100 | Buy Now |
DISTI #
FDMS5352
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Avnet Asia | Power MOSFET, N Channel, 60 V, 49 A, 6.7 mOhm, PQFN, 8 Pins, Surface Mount (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | 0 |
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$1.2288 / $1.3743 | Buy Now |
DISTI #
FDMS5352
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Avnet Silica | (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
FDMS5352
|
EBV Elektronik | (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FDMS5352
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS5352
onsemi
N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ, PQFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-8 | |
Package Description | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN | |
Manufacturer Package Code | 483AE | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 13.6 A | |
Drain-source On Resistance-Max | 0.0067 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDMS5352. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS5352, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDMS5352 | Rochester Electronics LLC | Check for Price | 13.6A, 60V, 0.0067ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN | FDMS5352 vs FDMS5352 |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range.
A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the input capacitor (CIN). This value provides a good balance between filtering and stability.
Choose an output capacitor with low ESR (Equivalent Series Resistance) and a capacitance value between 10uF to 47uF. A 22uF to 33uF X5R or X7R ceramic capacitor is a good starting point.
Keep high-current paths short and wide, using thick copper traces (at least 1 oz). Avoid sharp corners and use rounded edges to reduce current density. Use multiple vias to connect the device to the PCB's ground plane.