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N-Channel PowerTrench® MOSFET 75V, 100A, 3.7mΩ, PQFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS037N08B by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99AC9176
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Newark | Mosfet, N-Ch, 75V, 100A, 104.2W, Power56, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.00301Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.5V, Rohs Compliant: Yes |Onsemi FDMS037N08B RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
DISTI #
63W2862
|
Newark | Fet 75V 3.7 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS037N08B RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.1300 / $1.4300 | Buy Now |
DISTI #
FDMS037N08BCT-ND
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DigiKey | MOSFET N-CH 75V 100A 8PQFN Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3568 In Stock |
|
$1.1267 / $2.7300 | Buy Now |
DISTI #
FDMS037N08B
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Avnet Americas | Trans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS037N08B) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 12000 Factory Stock |
|
$1.0679 / $1.0993 | Buy Now |
DISTI #
512-FDMS037N08B
|
Mouser Electronics | MOSFETs PT7 75V 3.7mohm PQFN56 RoHS: Compliant | 2699 |
|
$1.1200 / $2.6800 | Buy Now |
DISTI #
E02:0323_06926477
|
Arrow Electronics | Trans MOSFET N-CH Si 75V 19.9A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2339 | Europe - 3000 |
|
$1.1546 / $1.8008 | Buy Now |
|
Onlinecomponents.com | Single N-Channel 75 V 3.7 mOhm 100 nC 104.2 W PowerTrench SMT Mosfet POWER 56-8 RoHS: Compliant | 0 |
|
$1.1200 / $3.0600 | Buy Now |
DISTI #
87803952
|
Verical | Trans MOSFET N-CH Si 75V 19.9A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 | Americas - 12000 |
|
$1.1338 | Buy Now |
DISTI #
16634546
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Verical | Trans MOSFET N-CH Si 75V 19.9A 8-Pin PQFN EP T/R Min Qty: 3000 Package Multiple: 3000 | Americas - 3000 |
|
$1.1507 / $1.7947 | Buy Now |
DISTI #
FDMS037N08B
|
TME | Transistor: N-MOSFET, unipolar, 75V, 100A, Idm: 400A, 104.2W, PQFN8 Min Qty: 1 | 0 |
|
$1.3000 / $2.4100 | RFQ |
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FDMS037N08B
onsemi
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Datasheet
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FDMS037N08B
onsemi
N-Channel PowerTrench® MOSFET 75V, 100A, 3.7mΩ, PQFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-8 | |
Package Description | QFN-8 | |
Manufacturer Package Code | 483AE | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 11 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 180.6 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 45 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104.2 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 169 ns | |
Turn-on Time-Max (ton) | 130 ns |
The maximum operating frequency of the FDMS037N08B is 100 kHz, but it can be operated at higher frequencies with reduced performance.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is Vgs = 5V, Vds = 15V.
The maximum power dissipation of the FDMS037N08B is 1.5W, and it is recommended to use a heat sink to ensure reliable operation.
The FDMS037N08B is rated for operation up to 150°C, but the maximum junction temperature should not exceed 175°C. Derate the power dissipation accordingly for high-temperature operation.
Handle the FDMS037N08B with ESD-protective equipment, and ensure that the device is properly grounded during handling and assembly. Use ESD-protective packaging and storage materials.