Part Details for FDMD8240LET40 by onsemi
Results Overview of FDMD8240LET40 by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
FDMD8240LET40 Information
FDMD8240LET40 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMD8240LET40
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
01AC8551
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Newark | Fet 40V 2.6 Mohm Pqfn/Reel Rohs Compliant: Yes |Onsemi FDMD8240LET40 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
FDMD8240LET40
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Avnet Americas | - Tape and Reel (Alt: FDMD8240LET40) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
V79:2366_30170732
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Arrow Electronics | FDMD8240LET40 ON Semiconductor Transistors MOSFETs N-CH 40V 24A 12-Pin PQFN EP T/R - Arrow.com Min Qty: 1 Package Multiple: 1 Date Code: 2235 | Americas - 3000 |
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$1.3550 | Buy Now |
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DISTI #
87024274
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Verical | FDMD8240LET40 ON Semiconductor Transistors MOSFETs N-CH 40V 24A 12-Pin PQFN EP T/R - Arrow.com Min Qty: 5 Package Multiple: 1 Date Code: 2235 | Americas - 3000 |
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$1.3550 | Buy Now |
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DISTI #
85986522
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Verical | FDMD8240LET40 ON Semiconductor Transistors MOSFETs N-CH 40V 24A 12-Pin PQFN EP T/R - Arrow.com Min Qty: 202 Package Multiple: 1 Date Code: 2201 | Americas - 1329 |
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$1.1566 / $1.8625 | Buy Now |
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Rochester Electronics | FDMD8240LET40 - Dual N-Channel Power Trench MOSFET 40V, 103A, 2.6m RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1329 |
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$0.9253 / $1.4900 | Buy Now |
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DISTI #
FDMD8240LET40
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TME | Transistor: N-MOSFET x2, unipolar, 40V, 73A, Idm: 489A, 50W, PQFN12 Min Qty: 1 | 0 |
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$2.2200 / $3.3100 | RFQ |
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DISTI #
FDMD8240LET40
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for FDMD8240LET40
FDMD8240LET40 CAD Models
FDMD8240LET40 Part Data Attributes
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FDMD8240LET40
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMD8240LET40
onsemi
Dual N-Channel Power Trench® MOSFET 40V, 103A, 2.6mΩ, PQFN-12, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | PQFN-12 | |
| Manufacturer Package Code | 483BN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 216 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 103 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 52 pF | |
| JESD-30 Code | R-PDSO-N12 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 12 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 489 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 76 ns | |
| Turn-on Time-Max (ton) | 38 ns |
FDMD8240LET40 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation. Use thermal interface material (TIM) and a heat sink if possible.
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Use a shielded enclosure, keep sensitive analog circuits away from the FDMD8240LET40, and ensure proper grounding and decoupling. Implement EMI filters and shielding on cables and connectors.
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Ensure a stable clock signal with minimal jitter (<100ps). Synchronize the device with other components using a single clock domain. Use a clock buffer or repeater if necessary.
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Use a low-ESR capacitor (e.g., 10uF) close to the device's power pins. Add a 1uF decoupling capacitor between the power pins and a 10nF capacitor between the power pins and ground. Ensure a clean, low-noise power supply.
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Perform functional testing, including input/output signal integrity and power consumption verification. Use a logic analyzer or oscilloscope to verify signal timing and integrity. Validate the device's performance under various operating conditions.