-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ, PQFN-12, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMD8240L by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
01AC8550
|
Newark | Fet 40V 2.6 Mohm Pqfn/Reel Rohs Compliant: Yes |Onsemi FDMD8240L RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
DISTI #
FDMD8240LCT-ND
|
DigiKey | MOSFET 2N-CH 40V 23A 12POWER Min Qty: 1 Lead time: 25 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
255 In Stock |
|
$1.1014 / $3.4300 | Buy Now |
DISTI #
FDMD8240L
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 40V 98A 12-Pin PowerFLAT T/R - Tape and Reel (Alt: FDMD8240L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
V79:2366_30170733
|
Arrow Electronics | Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Date Code: 2235 | Americas - 3000 |
|
$1.4780 / $2.8470 | Buy Now |
DISTI #
85983556
|
Verical | Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R Min Qty: 202 Package Multiple: 1 Date Code: 2201 | Americas - 3666 |
|
$1.8625 | Buy Now |
DISTI #
87042672
|
Verical | Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R Min Qty: 4 Package Multiple: 1 Date Code: 2235 | Americas - 3000 |
|
$1.4780 / $2.8470 | Buy Now |
DISTI #
85988190
|
Verical | Trans MOSFET N-CH 40V 23A 12-Pin PQFN EP T/R Min Qty: 202 Package Multiple: 1 Date Code: 2101 | Americas - 652 |
|
$1.8625 | Buy Now |
|
Rochester Electronics | FDMD8240L - Dual N-Channel, MOSFET - Power RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 4318 |
|
$0.9253 / $1.4900 | Buy Now |
DISTI #
FDMD8240L
|
TME | Transistor: N-MOSFET x2, unipolar, 40V, 62A, Idm: 464A, 42W, PQFN12 Min Qty: 1 | 0 |
|
$2.3800 / $3.5800 | RFQ |
DISTI #
FDMD8240L
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FDMD8240L
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDMD8240L
onsemi
Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ, PQFN-12, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-12 | |
Manufacturer Package Code | 483BN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 216 mJ | |
Case Connection | DRAIN SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 98 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 52 pF | |
JESD-30 Code | R-PDSO-N12 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 12 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 464 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 76 ns | |
Turn-on Time-Max (ton) | 38 ns |
This table gives cross-reference parts and alternative options found for FDMD8240L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMD8240L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
PSMN4R2-40VSHX | Nexperia | $1.3638 | PSMN4R2-40VSH - Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)@en-us | FDMD8240L vs PSMN4R2-40VSHX |
FDMD8240L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor | FDMD8240L vs FDMD8240L |
A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize electromagnetic interference (EMI).
The FDMD8240L requires a bias voltage of 3.3V or 5V. Ensure the bias voltage is stable and within the recommended range. A decoupling capacitor of 10nF to 100nF should be placed close to the VCC pin to filter out noise.
The FDMD8240L can handle input powers up to +20dBm. Exceeding this limit may cause damage to the device or affect its performance.
Check the input and output signals using an oscilloscope or spectrum analyzer. Verify the bias voltage and current. Check for proper PCB layout and decoupling. Consult the datasheet and application notes for troubleshooting guidelines.
The FDMD8240L is rated for operation up to 85°C. However, high temperatures can affect its performance and reliability. Ensure proper heat sinking and thermal management to maintain a safe operating temperature.