Datasheets
FDMC8882 by:

N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ, WDFN-8, 3000-REEL

Part Details for FDMC8882 by onsemi

Results Overview of FDMC8882 by onsemi

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FDMC8882 Information

FDMC8882 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMC8882

Part # Distributor Description Stock Price Buy
DISTI # 88T3285
Newark Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Onsemi FDMC8882 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1580
  • 1 $1.1400
  • 10 $0.6830
  • 25 $0.6220
  • 50 $0.5610
  • 100 $0.5000
$0.5000 / $1.1400 Buy Now
DISTI # 64R3021
Newark Fet 30V 14.3 Mohm Mlp33/Reel |Onsemi FDMC8882 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.4810
  • 6,000 $0.4400
  • 12,000 $0.3980
  • 18,000 $0.3850
  • 30,000 $0.3760
$0.3760 / $0.4810 Buy Now
DISTI # FDMC8882FSCT-ND
DigiKey MOSFET N-CH 30V 10.5A/16A 8MLP Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 49554
In Stock
  • 1 $1.0700
  • 10 $0.7150
  • 100 $0.5447
  • 500 $0.4806
  • 1,000 $0.4435
  • 3,000 $0.3460
$0.3460 / $1.0700 Buy Now
DISTI # 512-FDMC8882
Mouser Electronics MOSFETs 30V N-Channel Power Trench 174 MOSFET RoHS: Compliant 4306
  • 1 $1.0300
  • 10 $0.7010
  • 25 $0.6940
  • 100 $0.5340
  • 250 $0.5290
  • 500 $0.4460
  • 1,000 $0.4170
  • 3,000 $0.3460
$0.3460 / $1.0300 Buy Now
DISTI # V36:1790_06337934
Arrow Electronics Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2505 Americas - 6000
  • 3,000 $0.3452
$0.3452 Buy Now
DISTI # V72:2272_06337934
Arrow Electronics Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2247 Container: Cut Strips Americas - 901
  • 1 $0.4667
  • 10 $0.4218
  • 25 $0.4134
  • 100 $0.3839
  • 250 $0.3807
  • 500 $0.3549
$0.3549 / $0.4667 Buy Now
Onlinecomponents.com N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ RoHS: Compliant 0
  • 3,000 $0.3549
  • 6,000 $0.3495
  • 9,000 $0.3443
  • 12,000 $0.3391
  • 15,000 $0.3341
  • 27,000 $0.3290
$0.3290 / $0.3549 Buy Now
DISTI # 88038406
Verical Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2505 Americas - 6000
  • 3,000 $0.3452
$0.3452 Buy Now
DISTI # 85980715
Verical Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 641 Package Multiple: 1 Date Code: 2301 Americas - 5376
  • 641 $0.5859
$0.5859 Buy Now
DISTI # 85992081
Verical Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 641 Package Multiple: 1 Date Code: 2201 Americas - 3619
  • 641 $0.5859
$0.5859 Buy Now
DISTI # 65213109
Verical Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 17 Package Multiple: 1 Date Code: 2247 Americas - 901
  • 17 $0.4218
  • 25 $0.4134
  • 100 $0.3839
  • 250 $0.3807
  • 500 $0.3549
$0.3549 / $0.4218 Buy Now
Bristol Electronics   20
RFQ
Rochester Electronics Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0143ohm, N-Channel MOSFE RoHS: Compliant Status: Active Min Qty: 1 8995
  • 100 $0.4687
  • 500 $0.4218
  • 1,000 $0.3890
  • 10,000 $0.3468
  • 100,000 $0.2906
$0.2906 / $0.4687 Buy Now
DISTI # FDMC8882
TME Transistor: N-MOSFET, unipolar, 30V, 16A, 18W, WDFN8 Min Qty: 1 0
  • 1 $1.2930
  • 5 $0.5780
  • 25 $0.5110
  • 100 $0.4590
  • 500 $0.4280
$0.4280 / $1.2930 RFQ
DISTI # FDMC8882
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $0.3500
$0.3500 Buy Now
DISTI # FDMC8882
Avnet Asia Trans MOSFET N-CH 30V 10.5A 8-Pin MLP EP T/R (Alt: FDMC8882) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days 12000
  • 3,000 $0.3954
  • 6,000 $0.3691
  • 9,000 $0.3595
  • 15,000 $0.3504
  • 30,000 $0.3417
  • 75,000 $0.3335
  • 150,000 $0.3256
$0.3256 / $0.3954 Buy Now
DISTI # FDMC8882
Avnet Silica Trans MOSFET NCH 30V 105A 8Pin MLP EP TR (Alt: FDMC8882) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMC8882
EBV Elektronik Trans MOSFET NCH 30V 105A 8Pin MLP EP TR (Alt: FDMC8882) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 14.3m10V10.5A 2.5V 1 N-channel WDFN-8(3.3x3.3) MOSFETs ROHS 11
  • 1 $0.6382
  • 10 $0.6246
  • 30 $0.6156
  • 100 $0.6065
$0.6065 / $0.6382 Buy Now

Part Details for FDMC8882

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FDMC8882 Part Data Attributes

FDMC8882 onsemi
Buy Now Datasheet
Compare Parts:
FDMC8882 onsemi N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ, WDFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code WDFN-8
Package Description 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN
Manufacturer Package Code 511DR
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer onsemi
Additional Feature ULTRA-LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10.5 A
Drain-source On Resistance-Max 0.0143 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 18 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDMC8882 Related Parts

FDMC8882 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.

  • Use a common-mode choke and a differential-mode filter to reduce EMI emissions. Shielding the device and PCB with a metal enclosure or shield can also help reduce EMI radiation.

  • Use the device's low-power mode, reduce the switching frequency, and optimize the PCB layout to minimize power losses. Also, consider using a low-dropout regulator (LDO) to reduce power consumption.

  • Use a high-speed oscilloscope and a current probe to measure the device's output voltage and current. Also, use a thermal camera or thermocouple to measure the device's temperature.

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