Part Details for FDMC8882 by onsemi
Results Overview of FDMC8882 by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDMC8882 Information
FDMC8882 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMC8882
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88T3285
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Newark | Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Onsemi FDMC8882 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1580 |
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$0.5000 / $1.1400 | Buy Now |
DISTI #
64R3021
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Newark | Fet 30V 14.3 Mohm Mlp33/Reel |Onsemi FDMC8882 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3760 / $0.4810 | Buy Now |
DISTI #
FDMC8882FSCT-ND
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DigiKey | MOSFET N-CH 30V 10.5A/16A 8MLP Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
49554 In Stock |
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$0.3460 / $1.0700 | Buy Now |
DISTI #
512-FDMC8882
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Mouser Electronics | MOSFETs 30V N-Channel Power Trench 174 MOSFET RoHS: Compliant | 4306 |
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$0.3460 / $1.0300 | Buy Now |
DISTI #
V36:1790_06337934
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Arrow Electronics | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2505 | Americas - 6000 |
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$0.3452 | Buy Now |
DISTI #
V72:2272_06337934
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Arrow Electronics | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2247 Container: Cut Strips | Americas - 901 |
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$0.3549 / $0.4667 | Buy Now |
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Onlinecomponents.com | N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ RoHS: Compliant | 0 |
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$0.3290 / $0.3549 | Buy Now |
DISTI #
88038406
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Verical | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2505 | Americas - 6000 |
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$0.3452 | Buy Now |
DISTI #
85980715
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Verical | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 641 Package Multiple: 1 Date Code: 2301 | Americas - 5376 |
|
$0.5859 | Buy Now |
DISTI #
85992081
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Verical | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R RoHS: Compliant Min Qty: 641 Package Multiple: 1 Date Code: 2201 | Americas - 3619 |
|
$0.5859 | Buy Now |
Part Details for FDMC8882
FDMC8882 CAD Models
FDMC8882 Part Data Attributes
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FDMC8882
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC8882
onsemi
N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ, WDFN-8, 3000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | WDFN-8 | |
Package Description | 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN | |
Manufacturer Package Code | 511DR | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10.5 A | |
Drain-source On Resistance-Max | 0.0143 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 18 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
FDMC8882 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
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Use a common-mode choke and a differential-mode filter to reduce EMI emissions. Shielding the device and PCB with a metal enclosure or shield can also help reduce EMI radiation.
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Use the device's low-power mode, reduce the switching frequency, and optimize the PCB layout to minimize power losses. Also, consider using a low-dropout regulator (LDO) to reduce power consumption.
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Use a high-speed oscilloscope and a current probe to measure the device's output voltage and current. Also, use a thermal camera or thermocouple to measure the device's temperature.