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Part Details for FDMC8878 by onsemi
Results Overview of FDMC8878 by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMC8878 Information
FDMC8878 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMC8878
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6264
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Newark | Mosfet, N, Smd, Mlp, Transistor Polarity:N Channel, Continuous Drain Current Id:16.5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.014Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:1.7V, Power Dissipation Pd:2.1W, rohs Compliant: Yes |Onsemi FDMC8878 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
FDMC8878CT-ND
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DigiKey | MOSFET N-CH 30V 9.6A/16.5A 8MLP Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
228 In Stock |
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$0.4955 / $1.8600 | Buy Now |
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DISTI #
FDMC8878
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Avnet Americas | Trans MOSFET N-CH 30V 9.6A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC8878) RoHS: Compliant Min Qty: 1725 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 3408 Partner Stock |
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$0.5007 / $0.5112 | Buy Now |
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DISTI #
85987765
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Verical | Trans MOSFET N-CH Si 30V 9.6A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 426 Package Multiple: 1 Date Code: 1701 | Americas - 3000 |
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$0.5463 / $0.8810 | Buy Now |
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DISTI #
85986222
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Verical | Trans MOSFET N-CH Si 30V 9.6A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 426 Package Multiple: 1 Date Code: 2301 | Americas - 1722 |
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$0.5463 / $0.8810 | Buy Now |
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DISTI #
87892365
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Verical | Trans MOSFET N-CH Si 30V 9.6A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 61 Package Multiple: 1 Date Code: 2235 | Americas - 171 |
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$0.7900 / $1.0600 | Buy Now |
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Bristol Electronics | 513 |
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RFQ | ||
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Bristol Electronics | Min Qty: 5 | 346 |
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$0.3600 / $1.1250 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.6A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 534 |
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$0.9787 / $2.1160 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.6A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 473 |
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$0.4655 / $1.1172 | Buy Now |
Part Details for FDMC8878
FDMC8878 CAD Models
FDMC8878 Part Data Attributes
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FDMC8878
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC8878
onsemi
N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ, WDFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN-8 | |
| Manufacturer Package Code | 511DH | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9.6 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDMC8878 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
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Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
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The maximum allowable voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
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Yes, but ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI). Follow the recommended layout and decoupling guidelines.
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Use a TVS diode or a zener diode to clamp the voltage and protect the device from EOS. Also, ensure that the device is operated within the recommended voltage and current ratings.