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N-Channel Power Trench® MOSFET 150V, 16A, 51mΩ, WDFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMC86240 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
88T3281
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Newark | Mosfet, N Channel, 150V, 16A, Mlp 3.3X3.3, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.9V Rohs Compliant: Yes |Onsemi FDMC86240 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 8416 |
|
$1.3900 / $2.5200 | Buy Now |
DISTI #
29AC6264
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Newark | Fet 150V 51.0 Mohm Mlp33 Rohs Compliant: Yes |Onsemi FDMC86240 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 6000 |
|
$1.0100 / $1.2800 | Buy Now |
DISTI #
92R5537
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Newark | Fet 150V 51.0 Mohm Mlp33/Reel |Onsemi FDMC86240 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.0100 / $1.2800 | Buy Now |
DISTI #
FDMC86240CT-ND
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DigiKey | MOSFET N-CH 150V 4.6A/16A 8MLP Min Qty: 1 Lead time: 9 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
17635 In Stock |
|
$1.0079 / $2.6500 | Buy Now |
DISTI #
FDMC86240
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Avnet Americas | Power MOSFET, N Channel, 150 V, 16 A, 0.0447 ohm, MLP, Surface Mount - Tape and Reel (Alt: FDMC86240) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 600051000 Factory Stock |
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$0.9486 / $0.9833 | Buy Now |
DISTI #
FDMC86240
|
Avnet Americas | Power MOSFET, N Channel, 150 V, 16 A, 0.0447 ohm, MLP, Surface Mount - Tape and Reel (Alt: FDMC86240) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 51000 Factory Stock |
|
RFQ | |
DISTI #
88T3281
|
Avnet Americas | Power MOSFET, N Channel, 150 V, 16 A, 0.0447 ohm, MLP, Surface Mount - Bulk (Alt: 88T3281) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
|
$1.3200 / $2.6400 | Buy Now |
DISTI #
512-FDMC86240
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Mouser Electronics | MOSFETs 150V N-Channel PowerTrench MOSFET RoHS: Compliant | 69213 |
|
$1.0000 / $2.4500 | Buy Now |
DISTI #
E02:0323_02823178
|
Arrow Electronics | Trans MOSFET N-CH Si 150V 4.6A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2502 | Europe - 3000 |
|
$1.1787 | Buy Now |
DISTI #
V72:2272_06337914
|
Arrow Electronics | Trans MOSFET N-CH Si 150V 4.6A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2334 Container: Cut Strips | Americas - 2737 |
|
$1.0340 / $1.5931 | Buy Now |
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FDMC86240
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC86240
onsemi
N-Channel Power Trench® MOSFET 150V, 16A, 51mΩ, WDFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | WDFN-8 | |
Package Description | 3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | |
Manufacturer Package Code | 511DH | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 34 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
The critical timing parameters include the input rise and fall times, output delay, and propagation delay. These parameters are critical for ensuring reliable operation and should be carefully considered during design.
Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the device from electrostatic discharge. Also, ensure that the PCB is designed with ESD protection in mind, including the use of ESD-safe components and connectors.
Use a high-speed oscilloscope and a signal generator to test the device's performance. Measure the device's output waveform, rise and fall times, and propagation delay to ensure it meets the datasheet specifications.