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Part Details for FDMC86160ET100 by onsemi
Results Overview of FDMC86160ET100 by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMC86160ET100 Information
FDMC86160ET100 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMC86160ET100
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH3916
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Newark | Mosfet, N-Ch, 100V, 43A, Pqfn, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:43A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.9V Rohs Compliant: Yes |Onsemi FDMC86160ET100 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 900 |
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$1.0300 | Buy Now |
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DISTI #
45Y5121
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Newark | Fet 100V 14 Mohm Pqfn33/Reel Rohs Compliant: Yes |Onsemi FDMC86160ET100 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.0700 / $1.3500 | Buy Now |
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DISTI #
FDMC86160ET100CT-ND
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DigiKey | MOSFET N-CH 100V 9A/43A POWER33 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9543 In Stock |
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$1.0653 / $2.7200 | Buy Now |
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DISTI #
FDMC86160ET100
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Avnet Americas | Trans MOSFET N-CH 100V 9A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMC86160ET100) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$1.0026 / $1.0393 | Buy Now |
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DISTI #
512-FDMC86160ET100
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Mouser Electronics | MOSFETs 100V N-Channel Power Trench MOSFET RoHS: Compliant | 5639 |
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$1.0600 / $2.7300 | Buy Now |
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Onlinecomponents.com | PT5 100/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM RoHS: Compliant | 0 |
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$1.0100 / $1.1700 | Buy Now |
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DISTI #
FDMC86160ET100
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TME | Transistor: N-MOSFET, unipolar, 100V, 31A, Idm: 204A, 65W, Power33 Min Qty: 1 | 0 |
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$1.3900 / $2.2800 | RFQ |
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DISTI #
FDMC86160ET100
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$1.0700 | Buy Now |
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Chip 1 Exchange | INSTOCK | 2275 |
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RFQ | |
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DISTI #
FDMC86160ET100
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Avnet Silica | Trans MOSFET NCH 100V 9A 8Pin PQFN TR (Alt: FDMC86160ET100) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for FDMC86160ET100
FDMC86160ET100 CAD Models
FDMC86160ET100 Part Data Attributes
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FDMC86160ET100
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC86160ET100
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ, PQFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | PQFN-8 | |
| Manufacturer Package Code | 483AW | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 181 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-240BA | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 204 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDMC86160ET100 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
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Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a thermocouple or thermistor to monitor the device temperature.
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The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, it's recommended to keep the input voltage below 5V to ensure reliable operation.
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Yes, the FDMC86160ET100 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure that you follow the recommended design and testing guidelines for these applications.
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Use a logic analyzer or oscilloscope to monitor the device's input and output signals. Check the power supply voltage, input signal integrity, and PCB layout for any issues. Consult the datasheet and application notes for troubleshooting guidelines.