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Part Details for FDMC8030 by onsemi
Results Overview of FDMC8030 by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDMC8030 Information
FDMC8030 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMC8030
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
46AC0781
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Newark | Mosfet, Dual N-Ch, 40V, 12A, Power 33-8, Channel Type:N Channel, Drain Source Voltage Vds N Channel:40V, Drain Source Voltage Vds P Channel:40V, Continuous Drain Current Id N Channel:12A, Continuous Drain Current Id P Channel:12A Rohs Compliant: Yes |Onsemi FDMC8030 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3111 |
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$0.4980 / $0.5880 | Buy Now |
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DISTI #
FDMC8030CT-ND
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DigiKey | MOSFET 2N-CH 40V 12A 8PWR33 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
446 In Stock |
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$0.8211 / $1.9100 | Buy Now |
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DISTI #
V79:2366_18324808
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Arrow Electronics | Trans MOSFET N-CH 40V 12A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 2303 | Americas - 1027 |
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$0.5479 / $1.5070 | Buy Now |
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DISTI #
87042652
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Verical | Trans MOSFET N-CH 40V 12A 8-Pin WDFN EP T/R RoHS: Compliant Min Qty: 25 Package Multiple: 1 Date Code: 2303 | Americas - 1027 |
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$0.4791 / $0.9004 | Buy Now |
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Bristol Electronics | Min Qty: 4 | 66 |
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$0.5625 / $1.5000 | Buy Now |
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Bristol Electronics | 10 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12A I(D), 40V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 52 |
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$1.0000 / $2.0000 | Buy Now |
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DISTI #
FDMC8030
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
FDMC8030
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Avnet Silica | MOSFET Array Dual N Channel 40 V 12 A 10 Milliohms Power 33 8 Pins (Alt: FDMC8030) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDMC8030
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EBV Elektronik | MOSFET Array Dual N Channel 40 V 12 A 10 Milliohms Power 33 8 Pins (Alt: FDMC8030) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDMC8030
FDMC8030 CAD Models
FDMC8030 Part Data Attributes
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FDMC8030
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC8030
onsemi
Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ, WDFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN-8 | |
| Package Description | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | |
| Manufacturer Package Code | 511DG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 75 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 21 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 30 pF | |
| JESD-30 Code | S-PDSO-N4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 14 W | |
| Power Dissipation-Max (Abs) | 14 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 43 ns | |
| Turn-on Time-Max (ton) | 23 ns |
FDMC8030 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 5.5V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. Also, ensure the enable pin (EN) is properly biased to VCC or GND.
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A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for input decoupling. This helps to filter out noise and ensure stable operation.
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The FDMC8030 has a built-in thermal shutdown feature that activates when the junction temperature exceeds 150°C. Ensure proper heat sinking and thermal design to prevent overheating. If thermal shutdown occurs, the device will automatically recover when the temperature drops below 130°C.
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Keep the output stage as close to the load as possible. Use a star-configuration for the output traces and ensure they are as short as possible. Also, use a common-mode choke or ferrite bead to filter out high-frequency noise.