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P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ, PQFN-8, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMC610P by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
46AC0779
|
Newark | Mosfet, P-Ch, -12V, -80A, Power 33-8, Channel Type:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:80A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-4.5V, Gate Source Threshold Voltage Max:-700Mv Rohs Compliant: Yes |Onsemi FDMC610P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4586 |
|
$1.3600 / $2.1800 | Buy Now |
DISTI #
38X5352
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Newark | P-Channel Ertrench Mosfet/Reel Rohs Compliant: Yes |Onsemi FDMC610P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.9440 / $1.1900 | Buy Now |
DISTI #
FDMC610PCT-ND
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DigiKey | MOSFET P-CH 12V 80A POWER33 Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2680 In Stock |
|
$0.9147 / $2.3900 | Buy Now |
DISTI #
FDMC610P
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Avnet Americas | Power MOSFET, P Channel, 12 V, 80 A, 0.0028 ohm, Power 33, Surface Mount - Tape and Reel (Alt: FDMC610P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
|
$0.8609 / $0.8924 | Buy Now |
DISTI #
512-FDMC610P
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Mouser Electronics | MOSFETs P-CH PowerTrench MOSFET RoHS: Compliant | 1755 |
|
$0.9140 / $2.2800 | Buy Now |
DISTI #
V72:2272_06337867
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Arrow Electronics | Trans MOSFET P-CH 12V 22A 8-Pin Power 33 T/R Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks Date Code: 2214 Container: Cut Strips | Americas - 282 |
|
$0.9385 / $1.0820 | Buy Now |
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Onlinecomponents.com | P-channel Powertrench Mosfet - 8LD, Pqfn, Dual, Jedec MO-240 Ba, 3.3X3.3MM, Single Tied Dap RoHS: Compliant | 0 |
|
$0.9080 / $1.9030 | Buy Now |
DISTI #
85982798
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Verical | Trans MOSFET P-CH 12V 22A 8-Pin Power 33 T/R Min Qty: 242 Package Multiple: 1 Date Code: 2101 | Americas - 65959 |
|
$0.9605 / $1.5500 | Buy Now |
DISTI #
85987283
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Verical | Trans MOSFET P-CH 12V 22A 8-Pin Power 33 T/R Min Qty: 242 Package Multiple: 1 Date Code: 2401 | Americas - 20852 |
|
$0.9605 / $1.5500 | Buy Now |
DISTI #
85988105
|
Verical | Trans MOSFET P-CH 12V 22A 8-Pin Power 33 T/R Min Qty: 242 Package Multiple: 1 Date Code: 2201 | Americas - 20418 |
|
$0.9605 / $1.5500 | Buy Now |
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FDMC610P
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC610P
onsemi
P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ, PQFN-8, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | PQFN-8 | |
Package Description | ROHS COMPLIANT, POWER 33, 8 PIN | |
Manufacturer Package Code | 483AK | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.0039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240BA | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
The maximum allowed voltage on the gate driver output is 15V, but it's recommended to keep it below 12V to ensure reliable operation and minimize electromagnetic interference (EMI).
Yes, the FDMC610P can be used in a half-bridge configuration, but ensure that the bootstrap capacitor is properly sized and the dead time is set correctly to prevent shoot-through currents.
Use a shielded cable for the gate driver output, keep the PCB layout compact, and use a common mode choke or ferrite bead to filter the output. Also, ensure proper grounding and decoupling of the device.