Part Details for FDH45N50F-F133 by onsemi
Results Overview of FDH45N50F-F133 by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FDH45N50F-F133 Information
FDH45N50F-F133 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDH45N50F-F133
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH8632
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Newark | Mosfet, N-Ch, 500V, 45A, 150Deg C, 625W Rohs Compliant: Yes |Onsemi FDH45N50F-F133 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1119 |
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$5.2300 / $8.8200 | Buy Now |
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DISTI #
79AH2482
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Newark | Uf 500V 120Mohm F To220 Rohs Compliant: Yes |Onsemi FDH45N50F-F133 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 790 |
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$4.4300 / $5.5200 | Buy Now |
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DISTI #
FDH45N50F-F133-ND
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DigiKey | MOSFET N-CH 500V 45A TO247-3 Min Qty: 1 Lead time: 59 Weeks Container: Tube |
536 In Stock |
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$3.1581 / $7.0700 | Buy Now |
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DISTI #
FDH45N50F-F133
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Avnet Americas | Trans MOSFET N-CH 500V 45A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FDH45N50F-F133) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 59 Weeks, 0 Days Container: Tube | 7909000 Factory Stock |
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$2.9724 / $3.0870 | Buy Now |
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DISTI #
512-FDH45N50F_F133
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Mouser Electronics | MOSFETs 500V N Channel MOSFET FRFET RoHS: Compliant | 997 |
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$3.1500 / $7.0000 | Buy Now |
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Onlinecomponents.com | N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247 RoHS: Compliant | 0 |
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$2.9800 / $3.5600 | Buy Now |
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DISTI #
80561001
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Verical | Trans MOSFET N-CH 500V 45A 3-Pin(3+Tab) TO-247 Tube Min Qty: 2 Package Multiple: 1 Date Code: 2412 | Americas - 26979 |
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$3.1293 / $4.7919 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 45A, 500V, 0.12ohm, N-Channel, MOSFET, TO-247AD RoHS: Not Compliant Status: Active Min Qty: 1 | 5 |
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$2.6600 / $3.3200 | Buy Now |
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DISTI #
FDH45N50F-F133
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IBS Electronics | N-CHANNEL POWER MOSFET UNIFETTM FRFET®, 500 V 45 A 120 MΩ, TO-247 Min Qty: 30 Package Multiple: 1 | 1050 |
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$3.0420 / $3.2110 | Buy Now |
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DISTI #
FDH45N50F-F133
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$3.1600 | Buy Now |
Part Details for FDH45N50F-F133
FDH45N50F-F133 CAD Models
FDH45N50F-F133 Part Data Attributes
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FDH45N50F-F133
onsemi
Buy Now
Datasheet
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Compare Parts:
FDH45N50F-F133
onsemi
Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247, TO-247 3L, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247 3L | |
| Package Description | TO-247, 3 PIN | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 59 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1868 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 625 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDH45N50F-F133 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FDH45N50F-F133 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
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The recommended gate drive voltage for the FDH45N50F-F133 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and implementing filtering and decoupling capacitors.
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The maximum allowable current for the FDH45N50F-F133 is 45A, with a maximum pulsed current of 135A.