-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FDG6301N-F085 by onsemi
Results Overview of FDG6301N-F085 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
FDG6301N-F085 Information
FDG6301N-F085 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDG6301N-F085
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
48AC0967
|
Newark | Dual Nmos Sc70-6 25V 4Ohm/Reel |Onsemi FDG6301N-F085 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
|
Rochester Electronics | FDG6301 - Dual N-Channel Digital FET 25 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 1491 |
|
$0.0805 / $0.1298 | Buy Now |
|
DISTI #
FDG6301N-F085
|
TME | Transistor: N-MOSFET x2, unipolar, 25V, 0.22A, 0.3W Min Qty: 3 | 0 |
|
$0.1340 / $0.2410 | RFQ |
|
DISTI #
FDG6301N-F085
|
IBS Electronics | MOSFET ARRAY 2 N-CHANNEL (DUAL) 25V 220MA 300MW SURFACE MOUNT SC-70-6 Min Qty: 3000 Package Multiple: 1 | 33000 |
|
$0.1560 / $0.1625 | Buy Now |
Part Details for FDG6301N-F085
FDG6301N-F085 CAD Models
FDG6301N-F085 Part Data Attributes
|
|
FDG6301N-F085
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDG6301N-F085
onsemi
Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω, SC70 6L, 3000-REEL, Automotive Qualified
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SC70 6L | |
| Package Description | SC-70, 6 PIN | |
| Manufacturer Package Code | 419AD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 0.22 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDG6301N-F085
This table gives cross-reference parts and alternative options found for FDG6301N-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG6301N-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDG6301N_F085 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | FDG6301N-F085 vs FDG6301N_F085 |
| FDG6301N_F085 | onsemi | Check for Price | 25V, 0.22A,2.6Ω, SC-70-6, Logic Level Dual N-Channel Planar, SC70 6L, 15000-TAPE REEL | FDG6301N-F085 vs FDG6301N_F085 |
FDG6301N-F085 Frequently Asked Questions (FAQ)
-
The maximum junction temperature for the FDG6301N-F085 is 150°C. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
-
To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range.
-
For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink if necessary. Follow the recommended land pattern and keep the device away from heat sources.
-
Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Use ESD-protected workstations and follow proper handling procedures to minimize the risk of ESD damage.
-
Follow the recommended soldering profile outlined in the datasheet. Typically, this involves a peak temperature of 260°C for a maximum of 10 seconds, with a ramp-up and ramp-down rate of 3°C/s.