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Part Details for FDFS2P753Z by onsemi
Results Overview of FDFS2P753Z by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FDFS2P753Z Information
FDFS2P753Z by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDFS2P753Z
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDFS2P753Z-488-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 3 Min Qty: 841 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
5825 In Stock |
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$0.3600 | Buy Now |
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DISTI #
V72:2272_06300666
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Arrow Electronics | Trans MOSFET P-CH 30V 3A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1931 Container: Cut Strips | Americas - 29 |
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$0.0349 / $0.0361 | Buy Now |
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DISTI #
85986635
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Verical | Trans MOSFET P-CH 30V 3A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 874 Package Multiple: 1 Date Code: 1901 | Americas - 5825 |
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$0.4293 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 3A, 30V, 0.162ohm, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 5825 |
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$0.2129 / $0.3434 | Buy Now |
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DISTI #
FDFS2P753Z
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Avnet Silica | Trans MOSFET PCH 30V 3A 8Pin SOIC N TR (Alt: FDFS2P753Z) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDFS2P753Z
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EBV Elektronik | Trans MOSFET PCH 30V 3A 8Pin SOIC N TR (Alt: FDFS2P753Z) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDFS2P753Z
FDFS2P753Z CAD Models
FDFS2P753Z Part Data Attributes
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FDFS2P753Z
onsemi
Buy Now
Datasheet
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FDFS2P753Z
onsemi
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 6 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.162 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
FDFS2P753Z Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
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Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure the device is soldered within the recommended temperature range to prevent damage.
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Handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure all equipment and personnel are grounded. Implement ESD protection circuits in the system design if necessary.
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Use a low-ESR ceramic capacitor with a value of 10-22 μF and a voltage rating of 25-50 V. The capacitor should be placed as close as possible to the device's input pins.