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Part Details for FDFS2P106A by onsemi
Results Overview of FDFS2P106A by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDFS2P106A Information
FDFS2P106A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDFS2P106A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDFS2P106A
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TME | Transistor: P-MOSFET, unipolar, -60V, -3A, 1.6W, SO8 Min Qty: 1 | 0 |
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$0.7500 / $1.1300 | RFQ |
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DISTI #
FDFS2P106A
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Avnet Silica | Trans MOSFET PCH 60V 3A 8Pin SOIC N TR (Alt: FDFS2P106A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDFS2P106A
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EBV Elektronik | Trans MOSFET PCH 60V 3A 8Pin SOIC N TR (Alt: FDFS2P106A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 3A 140m4.5V2.7A 2W 1 piece P-channel SO-8 MOSFETs ROHS | 4 |
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$5.2490 / $5.5101 | Buy Now |
Part Details for FDFS2P106A
FDFS2P106A CAD Models
FDFS2P106A Part Data Attributes
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FDFS2P106A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDFS2P106A
onsemi
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 66 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDFS2P106A
This table gives cross-reference parts and alternative options found for FDFS2P106A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDFS2P106A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDC5614P_NF073 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | FDFS2P106A vs FDC5614P_NF073 |
| FDFS2P106A_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDFS2P106A vs FDFS2P106A_NL |
| FDC5614P | Rochester Electronics LLC | Check for Price | 3000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 | FDFS2P106A vs FDC5614P |
| FDC5614PT/R_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | FDFS2P106A vs FDC5614PT/R_NL |
| FDC5614P_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | FDFS2P106A vs FDC5614P_NL |
FDFS2P106A Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FDFS2P106A is -40°C to 150°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 10-15V.
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the FDFS2P106A close to the power source. Avoid using vias or narrow traces near the device.
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Use a voltage regulator or a zener diode to limit the voltage, and add a current-limiting resistor or a fuse to prevent overcurrent conditions.
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Store the FDFS2P106A in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid touching the leads to prevent electrostatic discharge.