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Part Details for FDD7N25LZTM by onsemi
Results Overview of FDD7N25LZTM by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDD7N25LZTM Information
FDD7N25LZTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD7N25LZTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH6239
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Newark | Mosfet, N-Ch, 250V, 6.2A, 150Deg C, 56W Rohs Compliant: Yes |Onsemi FDD7N25LZTM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4872 |
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$0.6420 / $1.3600 | Buy Now |
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DISTI #
27T6421
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Newark | N-Channel UnifetTm Mosfet 250V, 6.2A, 550M/Reel Rohs Compliant: Yes |Onsemi FDD7N25LZTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3240 / $0.4260 | Buy Now |
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DISTI #
FDD7N25LZTMCT-ND
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DigiKey | MOSFET N-CH 250V 6.2A DPAK Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5587 In Stock |
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$0.3030 / $1.0800 | Buy Now |
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DISTI #
FDD7N25LZTM
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Avnet Americas | Trans MOSFET N-CH 250V 6.2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD7N25LZTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel | 0 |
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$0.2782 / $0.2884 | Buy Now |
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DISTI #
512-FDD7N25LZTM
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Mouser Electronics | MOSFETs 250V N-Channel MOSFET, UniFET RoHS: Compliant | 17312 |
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$0.3110 / $1.1000 | Buy Now |
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DISTI #
E02:0323_03249624
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Arrow Electronics | Trans MOSFET N-CH 250V 6.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks Date Code: 2507 | Europe - 5000 |
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$0.3033 / $0.3391 | Buy Now |
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DISTI #
73928946
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RS | Transistor, N-channel, UniFEt MOSFET, 250 V, 6.2 A, 550 mOhm, 56 W Min Qty: 10 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$1.0500 / $1.1700 | RFQ |
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Onlinecomponents.com | N-Channel Power MOSFET, UniFETTM, 250V, 6.2A, 550mΩ, DPAK RoHS: Compliant | 0 |
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$0.2818 / $0.3071 | Buy Now |
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DISTI #
87864878
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Verical | Trans MOSFET N-CH 250V 6.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2507 | Americas - 5000 |
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$0.3046 / $0.3416 | Buy Now |
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DISTI #
87891926
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Verical | Trans MOSFET N-CH 250V 6.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 96 Package Multiple: 1 | Americas - 2315 |
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$0.4840 / $1.0300 | Buy Now |
Part Details for FDD7N25LZTM
FDD7N25LZTM CAD Models
FDD7N25LZTM Part Data Attributes
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FDD7N25LZTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD7N25LZTM
onsemi
Power MOSFET, N-Channel, UniFETTM, 250V, 6.2A, 550mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 / TO-252-3 | |
| Package Description | DPAK-3/2 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 7 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 6.2 A | |
| Drain-source On Resistance-Max | 0.57 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 56 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDD7N25LZTM Frequently Asked Questions (FAQ)
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The maximum junction temperature for the FDD7N25LZTM is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
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To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-5V. Additionally, use a suitable gate resistor (Rg) to limit the gate current and prevent oscillations.
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For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity. Place the device on a heat sink or a thermal pad, and use thermal vias to dissipate heat. Keep the PCB layout compact and symmetrical to minimize parasitic inductances.
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Use a suitable voltage regulator or overvoltage protection (OVP) circuit to prevent voltage spikes or surges. Implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC. Ensure the protection circuits are designed to respond quickly to fault conditions.
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A suitable gate drive circuit for the FDD7N25LZTM includes a gate driver IC (e.g., UCC37322 or FAN5350) with a bootstrap capacitor and a gate resistor. The gate driver should be able to provide a high current (e.g., 2A) and a fast rise time (e.g., 10ns) to ensure proper switching.