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Transistors / Power Field-Effect Transistors / FDD3670
Datasheets
FDD3670 by:

100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FDD3670 by onsemi

Results Overview of FDD3670 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FDD3670 Information

FDD3670 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDD3670

Part # Distributor Description Stock Price Buy
DISTI # 31Y1354
Newark Mosfet, N-Ch, 100V, 34A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:34A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi FDD3670 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1844
  • 1 $2.0000
  • 10 $1.5500
  • 25 $1.5300
  • 50 $1.5200
  • 100 $1.5000
$1.5000 / $2.0000 Buy Now
DISTI # 58K1433
Newark N Channel Mosfet, 100V, 34A, To-252, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:34A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:83W Rohs Compliant: Yes |Onsemi FDD3670 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.8260
  • 3,000 $0.7900
  • 6,000 $0.7390
  • 12,000 $0.6880
  • 18,000 $0.6620
  • 30,000 $0.6520
$0.6520 / $0.8260 Buy Now
DISTI # FDD3670CT-ND
DigiKey MOSFET N-CH 100V 34A TO252 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1684
In Stock
  • 1 $1.6600
  • 10 $1.3380
  • 2,500 $1.0290
  • 5,000 $0.9898
$0.9898 / $1.6600 Buy Now
DISTI # FDD3670
Avnet Americas Power MOSFET, N Channel, 100 V, 34 A, 0.022 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6245
  • 5,000 $0.6213
  • 10,000 $0.6181
  • 15,000 $0.6149
  • 20,000 $0.6117
$0.6117 / $0.6245 Buy Now
DISTI # 512-FDD3670
Mouser Electronics MOSFETs 100V NCh PowerTrench RoHS: Compliant 11622
  • 1 $1.6300
  • 10 $1.1800
  • 100 $1.0700
  • 2,500 $1.0500
$1.0500 / $1.6300 Buy Now
DISTI # V79:2366_18816219
Arrow Electronics Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 1224 Americas - 2
  • 1 $1.6267
  • 10 $1.1776
  • 100 $1.0679
  • 2,500 $1.0479
$1.0479 / $1.6267 Buy Now
Onlinecomponents.com PowerTrench® MOSFET, 100V N-Channel, 34A, 32mΩ RoHS: Compliant 0
  • 250 $1.2000
  • 500 $1.1800
  • 1,000 $1.1200
  • 2,500 $1.0800
  • 5,000 $1.0600
  • 7,500 $1.0500
$1.0500 / $1.2000 Buy Now
DISTI # 87891686
Verical Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) DPAK T/R Min Qty: 27 Package Multiple: 1 Americas - 1468
  • 27 $1.0500
  • 50 $0.9720
  • 100 $0.9580
$0.9580 / $1.0500 Buy Now
Rochester Electronics Power Field-Effect Transistor, 34A, 100V, 0.032ohm, N-Channel, MOSFET, TO-252 RoHS: Not Compliant Status: Active Min Qty: 1 167
  • 100 $1.4800
  • 500 $1.3300
  • 1,000 $1.2300
  • 10,000 $1.1000
  • 100,000 $0.9179
$0.9179 / $1.4800 Buy Now
DISTI # FDD3670
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.6400
$0.6400 Buy Now
DISTI # FDD3670
Avnet Silica Power MOSFET N Channel 100 V 34 A 0022 ohm TO252 DPAK Surface Mount (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDD3670
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1468
  • 1 $1.4600
  • 10 $1.0500
  • 50 $0.9720
  • 100 $0.9580
  • 2,000 $0.9370
  • 2,500 $0.9300
  • 5,000 $0.9090
$0.9090 / $1.4600 Buy Now
DISTI # FDD3670
EBV Elektronik Power MOSFET N Channel 100 V 34 A 0022 ohm TO252 DPAK Surface Mount (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 32m10V7.3A 4V 1 N-channel TO-252-2 MOSFETs ROHS 58
  • 1 $2.5294
  • 10 $2.1614
  • 30 $1.9306
  • 100 $1.5415
  • 500 $1.4344
  • 1,000 $1.3877
$1.3877 / $2.5294 Buy Now

Part Details for FDD3670

FDD3670 CAD Models

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FDD3670 Part Data Attributes

Parametric Data
FDD3670 onsemi
Buy Now Datasheet
Compare Parts:
FDD3670 onsemi 100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 360 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD3670

This table gives cross-reference parts and alternative options found for FDD3670. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3670, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDD3670 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 34A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FDD3670 vs FDD3670
Part Number Manufacturer Composite Price Description Compare
IRF5M3710SCX Infineon Technologies AG Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 FDD3670 vs IRF5M3710SCX
AP50T10GJ-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power FDD3670 vs AP50T10GJ-HF
IRF5M3710SCV Infineon Technologies AG Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 FDD3670 vs IRF5M3710SCV
AP50T10GP-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power FDD3670 vs AP50T10GP-HF
AP50T10GS-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power FDD3670 vs AP50T10GS-HF
SUD35N10-26P-T4GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 FDD3670 vs SUD35N10-26P-T4GE3
AP50T10GH-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power FDD3670 vs AP50T10GH-HF
IRF5M3710PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 FDD3670 vs IRF5M3710PBF

FDD3670 Related Parts

FDD3670 Frequently Asked Questions (FAQ)

  • The FDD3670 can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • The FDD3670 requires a bias voltage of 12V to 15V on the gate pin, and a source pin voltage of 0V to 5V. Ensure the bias voltage is stable and within the recommended range for optimal performance.

  • To minimize thermal resistance, use a thermal pad on the bottom of the package, and ensure good thermal conductivity between the package and the PCB. A thermal via or thermal pad under the package can also help to dissipate heat.

  • Yes, the FDD3670 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is designed to handle the high-frequency switching requirements.

  • Handle the FDD3670 with ESD-protective equipment, and ensure the PCB design includes ESD protection circuitry, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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