Datasheets
FDD3670 by:

Power Field-Effect Transistor, 34A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for FDD3670 by Fairchild Semiconductor Corporation

Results Overview of FDD3670 by Fairchild Semiconductor Corporation

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FDD3670 Information

FDD3670 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDD3670

Part # Distributor Description Stock Price Buy
Bristol Electronics   998
RFQ
Bristol Electronics   63
RFQ
Quest Components   798
  • 1 $3.7920
  • 343 $1.5642
  • 640 $1.4220
$1.4220 / $3.7920 Buy Now
Quest Components   50
  • 1 $3.1600
  • 12 $1.9750
  • 39 $1.7380
$1.7380 / $3.1600 Buy Now
Vyrian Transistors 2552
RFQ

Part Details for FDD3670

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FDD3670 Part Data Attributes

FDD3670 Fairchild Semiconductor Corporation
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FDD3670 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 34A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 360 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDD3670 Related Parts

FDD3670 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDD3670 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.

  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. Typically, a voltage supply of 12V to 15V is recommended, and the current limit should be set to 1A to 2A, depending on the application.

  • For optimal thermal management, it's recommended to use a multi-layer PCB with a thermal pad connected to a heat sink or a copper plane. Keep the component away from high-temperature sources and ensure good airflow around the device. A minimum of 1 oz copper thickness is recommended for the PCB.

  • Yes, the FDD3670 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's capabilities.

  • To protect the FDD3670 from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an anti-static bag or container. Ensure that the PCB and assembly process also follow ESD protection guidelines.

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