Part Details for FDD2582 by Rochester Electronics LLC
Results Overview of FDD2582 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDD2582 Information
FDD2582 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDD2582
FDD2582 CAD Models
FDD2582 Part Data Attributes
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FDD2582
Rochester Electronics LLC
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Datasheet
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FDD2582
Rochester Electronics LLC
3.7A, 150V, 0.066ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-252AA | |
| Package Description | TO-252AA, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 59 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |