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Part Details for FDD120AN15A0 by onsemi
Results Overview of FDD120AN15A0 by onsemi
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Medical Imaging
FDD120AN15A0 Information
FDD120AN15A0 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD120AN15A0
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
1467970RL
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Farnell | MOSFET, N, SMD, TO-252AA RoHS: Compliant Min Qty: 100 Lead time: 11 Weeks, 1 Days Container: Reel | 4470 |
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$0.4337 / $0.5580 | Buy Now |
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DISTI #
1467970
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Farnell | MOSFET, N, SMD, TO-252AA RoHS: Compliant Min Qty: 5 Lead time: 11 Weeks, 1 Days Container: Cut Tape | 4470 |
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$0.4337 / $1.2668 | Buy Now |
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DISTI #
2323168
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Farnell | MOSFET, N CH, 150V, 14A, TO-252AA RoHS: Compliant Min Qty: 2500 Lead time: 11 Weeks, 1 Days Container: Reel | 0 |
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$0.3848 / $0.3874 | Buy Now |
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DISTI #
FDD120AN15A0CT-ND
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DigiKey | MOSFET N-CH 150V 2.8A/14A DPAK Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8513 In Stock |
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$0.3273 / $1.2400 | Buy Now |
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DISTI #
FDD120AN15A0
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Avnet Americas | Trans MOSFET N-CH 150V 2.8A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD120AN15A0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days Container: Reel | 37500 Factory Stock |
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$0.3031 / $0.3141 | Buy Now |
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DISTI #
512-FDD120AN15A0
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Mouser Electronics | MOSFETs 150V 14a 0.120 Ohm RoHS: Compliant | 6465 |
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$0.3340 / $1.2300 | Buy Now |
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Onlinecomponents.com | N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ RoHS: Compliant |
2500 In Stock |
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$0.3145 / $0.3473 | Buy Now |
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DISTI #
87996181
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Verical | Trans MOSFET N-CH 150V 2.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 | Americas - 32500 |
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$0.3240 | Buy Now |
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DISTI #
86918969
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Verical | Trans MOSFET N-CH 150V 2.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2445 | Americas - 2500 |
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$0.4109 / $0.4515 | Buy Now |
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Bristol Electronics | 380 |
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RFQ |
Part Details for FDD120AN15A0
FDD120AN15A0 CAD Models
FDD120AN15A0 Part Data Attributes
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FDD120AN15A0
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD120AN15A0
onsemi
N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ, DPAK-3 / TO-252-3, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 / TO-252-3 | |
| Package Description | TO-252AA, 3 PIN | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 122 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD120AN15A0
This table gives cross-reference parts and alternative options found for FDD120AN15A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD120AN15A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUF75829D3ST | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | FDD120AN15A0 vs HUF75829D3ST |
| HUF75829D3S | Intersil Corporation | Check for Price | 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | FDD120AN15A0 vs HUF75829D3S |
| HUF75829D3S | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | FDD120AN15A0 vs HUF75829D3S |
| HUF75829D3ST | Rochester Electronics LLC | Check for Price | 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | FDD120AN15A0 vs HUF75829D3ST |
FDD120AN15A0 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the FDD120AN15A0 is 150°C. Exceeding this temperature can lead to device failure.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good airflow around the device. The heat sink should be attached to the device using a thermal interface material with a thermal conductivity of 1 W/m-K or higher.
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The recommended gate drive voltage for the FDD120AN15A0 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
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Yes, the FDD120AN15A0 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation.
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To protect the FDD120AN15A0 from overvoltage and overcurrent, use a voltage clamp or a surge protector to limit the voltage across the device, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.