Part Details for FDD10AN06A0 by onsemi
Results Overview of FDD10AN06A0 by onsemi
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDD10AN06A0 Information
FDD10AN06A0 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD10AN06A0
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8830
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Newark | N Channel Mosfet, 60V, 50A To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDD10AN06A0 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.3100 | Buy Now |
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DISTI #
FDD10AN06A0CT-ND
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DigiKey | MOSFET N-CH 60V 11A/50A TO252AA Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3022 In Stock |
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$0.8457 / $2.2800 | Buy Now |
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DISTI #
FDD10AN06A0
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Avnet Americas | Power MOSFET, N Channel, 60 V, 50 A, 0.0094 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: FDD10AN06A0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days Container: Reel | 20487 Factory Stock |
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$0.7659 / $0.7939 | Buy Now |
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DISTI #
512-FDD10AN06A0
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Mouser Electronics | MOSFETs 60V 50a .15 Ohms/VGS=1V RoHS: Compliant | 5092 |
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$0.8450 / $2.2300 | Buy Now |
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DISTI #
E02:0323_00841904
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Arrow Electronics | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks Date Code: 2413 | Europe - 2500 |
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$0.8325 | Buy Now |
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DISTI #
V72:2272_06300958
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Arrow Electronics | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2332 Container: Cut Strips | Americas - 1522 |
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$0.8348 / $1.3575 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK RoHS: Compliant | 0 |
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$0.7920 / $0.8920 | Buy Now |
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DISTI #
87651704
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Verical | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 | Americas - 20000 |
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$0.8189 | Buy Now |
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DISTI #
88740769
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Verical | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2413 | Americas - 2500 |
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$0.8336 | Buy Now |
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DISTI #
85982051
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Verical | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 273 Package Multiple: 1 Date Code: 2301 | Americas - 2490 |
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$1.3750 | Buy Now |
Part Details for FDD10AN06A0
FDD10AN06A0 CAD Models
FDD10AN06A0 Part Data Attributes
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FDD10AN06A0
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD10AN06A0
onsemi
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ, DPAK-3 / TO-252-3, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 / TO-252-3 | |
| Package Description | TO-252AA, 3 PIN | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 429 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD10AN06A0
This table gives cross-reference parts and alternative options found for FDD10AN06A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD10AN06A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDD10AN06A0_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | FDD10AN06A0 vs FDD10AN06A0_NL |
FDD10AN06A0 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the FDD10AN06A0 is 150°C. Exceeding this temperature can lead to device failure.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 10°C/W or lower, and ensuring good airflow around the device. Additionally, the PCB design should allow for good thermal conduction.
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The recommended gate drive voltage for the FDD10AN06A0 is between 10V and 15V. This ensures proper switching and minimizes power losses.
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Yes, the FDD10AN06A0 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
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To protect the FDD10AN06A0, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and consider adding overcurrent protection using a fuse or a current sense resistor.