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Part Details for FDC645N by onsemi
Results Overview of FDC645N by onsemi
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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FDC645N Information
FDC645N by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDC645N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
9845453RL
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Farnell | MOSFET, N CH, 30V, 5.5A, SUPERSOT RoHS: Compliant Min Qty: 100 Lead time: 16 Weeks, 1 Days Container: Reel | 19624 |
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$0.3063 / $0.4224 | Buy Now |
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DISTI #
9845453
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Farnell | MOSFET, N CH, 30V, 5.5A, SUPERSOT RoHS: Compliant Min Qty: 5 Lead time: 16 Weeks, 1 Days Container: Cut Tape | 19624 |
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$0.3063 / $0.9150 | Buy Now |
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DISTI #
4279701
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Farnell | RoHS: Compliant Min Qty: 250 Container: Each | 0 |
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$0.3509 | Buy Now |
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DISTI #
2985491
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Farnell | MOSFET, N CH, 30V, 5.5A, SUPERSOT RoHS: Compliant Min Qty: 3000 Lead time: 16 Weeks, 1 Days Container: Reel | 0 |
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$0.2483 / $0.2645 | Buy Now |
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DISTI #
FDC645NCT-ND
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DigiKey | MOSFET N-CH 30V 5.5A SUPERSOT6 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2899 In Stock |
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$0.2325 / $0.8800 | Buy Now |
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DISTI #
512-FDC645N
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Mouser Electronics | MOSFETs SSOT-6 N-CH RoHS: Compliant | 4692 |
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$0.2440 / $0.8600 | Buy Now |
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DISTI #
E02:0323_00842186
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Arrow Electronics | Trans MOSFET N-CH 30V 5.5A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2413 | Europe - 6000 |
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$0.2321 / $0.2446 | Buy Now |
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DISTI #
V72:2272_06298583
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Arrow Electronics | Trans MOSFET N-CH 30V 5.5A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2311 Container: Cut Strips | Americas - 931 |
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$0.2496 / $0.4699 | Buy Now |
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Onlinecomponents.com | N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ RoHS: Compliant |
3000 In Stock |
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$0.2257 / $0.2624 | Buy Now |
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DISTI #
87892510
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Verical | Trans MOSFET N-CH 30V 5.5A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 136 Package Multiple: 1 Date Code: 2311 | Americas - 17426 |
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$0.2970 / $0.4470 | Buy Now |
Part Details for FDC645N
FDC645N CAD Models
FDC645N Part Data Attributes
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FDC645N
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC645N
onsemi
N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ, TSOT-23-6, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TSOT-23-6 | |
| Package Description | SUPERSOT-6 | |
| Manufacturer Package Code | 419BL | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 0.0055 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDC645N
This table gives cross-reference parts and alternative options found for FDC645N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC645N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDC645N | Rochester Electronics LLC | Check for Price | 5.5mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | FDC645N vs FDC645N |
FDC645N Frequently Asked Questions (FAQ)
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The FDC645N can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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The FDC645N requires a bias voltage of 2.5V to 5.5V on the VCC pin, and a bias current of 1mA to 10mA on the VBIAS pin. Ensure proper biasing for optimal performance and to prevent damage to the device.
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To minimize EMI and noise, use a multi-layer PCB with a solid ground plane, keep the FDC645N away from high-frequency signals, and use a shielded enclosure. Also, ensure that the PCB layout is symmetrical and balanced to reduce electromagnetic radiation.
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Use ESD protection devices such as TVS diodes or ESD suppressors on the input and output pins of the FDC645N. Also, ensure that the PCB is designed with ESD protection in mind, and handle the device with ESD-safe materials and tools.
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Store the FDC645N in a dry, cool place, away from direct sunlight and moisture. Handle the device with ESD-safe materials and tools, and avoid bending or flexing the leads. Use anti-static packaging and follow proper handling procedures to prevent damage.